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QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor
April 2007
QSC112, QSC113, QSC114
Plastic Silicon Infrared Phototransistor
Features
■
Tight production distribution
■
Steel lead frames for improved reliability in solder
■
■
■
■
tm
Description
The QSC112/113/114 is a silicon phototransistor encap-
sulated in an infrared transparent, black T-1 package.
PACKAGE DIMENSIONS
mounting
Good optical-to-mechanical alignment
Plastic package is infrared transparent black to
attenuate visible light
Can be used with QECXXX LED
Black plastic body allows easy recognition from LED
Package Dimensions
0.116 (2.95)
REFERENCE
SURFACE
0.052 (1.32)
0.032 (0.082)
0.193 (4.90)
0.030 (0.76)
NOM
0.800 (20.3)
MIN
0.050 (1.27)
EMITTER
0.100 (2.54)
NOM
Schematic
COLLECTOR
0.155 (3.94)
0.018 (0.46)
SQ. (2X)
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.10 (.25) on all non-nominal dimensions
unless otherwise specified.
EMITTER
©2005 Fairchild Semiconductor Corporation
QSC112, QSC113, QSC114 Rev. 1.0.2
www.fairchildsemi.com
QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
V
CE
V
EC
P
D
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature
(Flow)
(2,3)
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
(1)
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
30
5
100
Units
°C
°C
°C
°C
V
V
mW
Notes:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical/Optical Characteristics
(T
A
=25°C)
Symbol Parameter
λ
PS
Θ
I
CEO
BV
CEO
BV
ECO
I
C(ON)
Peak Sensitivity Wavelength
Reception Angle
Collector-Emitter Dark Current
Collector-Emitter Breakdown
Emitter-Collector Breakdown
On-State Collector Current QSC112
On-State Collector Current QSC113
On-State Collector Current QSC114
V
CE(sat)
t
r
t
f
Saturation Voltage
Rise Time
Fall Time
Ee = 0.5 mW/cm
2
, I
C
= 0.5 mA
(5)
V
CC
= 5 V, R
L
= 100
Ω
, I
C
= 2 mA
5.0
5.0
V
CE
= 10 V, Ee = 0
I
C
= 1 mA
I
E
= 100 µA
Ee = 0.5 mW/cm
2
, V
CE
= 5 V
(5)
30
5
1
2.40
4.00
0.4
V
µs
4
9.60
Test Conditions
Min.
Typ.
880
±4
Max. Units
nm
°
100
nA
V
V
mA
Note:
5.
λ
= 880 nm, AlGaAs.
©2005 Fairchild Semiconductor Corporation
QSC112, QSC113, QSC114 Rev. 1.0.2
www.fairchildsemi.com
2
QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor
Typical Performance Curves
Figure 1. Light Current vs. Radiant Intensity
10
2
V
CE
= 5V
GaAs Light Source
Figure 2. Angular Response Curve
110°
100°
90°
80°
70°
60°
50°
40°
30°
20°
10°
0°
1.0
I
C(ON)
- Light Current (mA)
120°
130°
10
1
140°
150°
160°
170°
180°
1.0
10
-1
0.1
10
0
0.8
0.6
0.4
0.2
0.0
0.2
0.4
0.6
0.8
E
e
- Radiant Intensity (mW/cm
2
)
1
Figure 3. Dark Current vs. Collector - Emitter Voltage
10
1
10
1
Figure 4. Light Current vs. Collector - Emitter Voltage
Ie = 1mW/cm
2
I
CEO
- Dark Current (nA)
10
0
I
L
- Normalized Light Current
Ie = 0.5mW/cm
2
10
0
Ie = 0.2mW/cm
2
Ie = 0.1mW/cm
2
10
-1
10
-1
Normalized to:
V
CE
= 5V
Ie = 0.5mW/cm
2
T
A
= 25
o
C
10
-2
10
-2
10
-3
0
5
10
15
20
25
30
0.1
1
10
V
CE
- Collector-Emitter Voltage (V)
V
CE
- Collector-Emitter Voltage (V)
Figure 5. Dark Current vs. Ambient Temperature
10
4
Normalized to:
V
CE
= 25V
I
CEO
- Normalized Dark Current
10
3
T
A
= 25 C
o
V
CE
= 25V
V
CE
= 10V
10
2
10
1
10
0
10
-1
25
50
75
100
o
T
A
- Ambient Temperature ( C )
©2005 Fairchild Semiconductor Corporation
QSC112, QSC113, QSC114 Rev. 1.0.2
www.fairchildsemi.com
3
QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
Product Status
Formative or In Design
First Production
Definition
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I26
2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
No Identification Needed
Full Production
Obsolete
Not In Production
©2005 Fairchild Semiconductor Corporation
QSC112, QSC113, QSC114 Rev. 1.0.2
www.fairchildsemi.com
4
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