MICROWAVE POWER MMIC AMPLIFIER
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
TMD7185-2
FEATURES
n
HIGH POWER
P1dB=33.0dBm at 7.1GHz to 8.5GHz
n
HIGH GAIN
G1dB=28.0dB at 7.1GHz to 8.5GHz
n
BROAD BAND INTERNALLY MATCHED
n
HERMETICALLY SEALED PACKAGE
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS
Drain Supply Voltage
Gate Supply Voltage
Input Power
Flange Temperature
Storage Temperature
SYMBOL
V
DD
V
GG
P
in
T
f
T
stg
UNIT
V
V
dBm
°
C
°
C
RATING
15
-10
10
-30
∼
+80
-65
∼
+175
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Input VSWR
3
rd
Order Intermodulation
Distortion
I
DD
VSWRin
IM
3
Po (S.C.L.)=22.0 dBm
G
1dB
SYMBOL
P
1dB
V
DD
= 10V
V
GG
= -5V
dB
A
dBc
27.0
-42
28.0
1.4
-45
1.7
3.0
CONDITIONS
UNIT
dBm
MIN.
32.0
TYP. MAX.
33.0
f
= 7.1 – 8.5GHz
uThe
information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Mar.2006
TMD7185-2
PACKAGE OUTLINE (2-11E1B)
Unit in mm
C2
2.5±0.2
j
k
l
m
q
p
15
±
0.2
10
±
0.2
o
n
6 - 2.54± 0.2
18
±
0.2
j:
No Connection
k
:
RF IN
l:
No Connection
m:
V
GG
n:
No Connection
o:
p:
q:
r:
RF OUT
No Connection
V
DD
GND
8- 0.4± 0.1
r
7-R0.4
2.0±0.5
11.0
±
0.2
2.0±0.5
0.1
±
0.05
RECOMMENDED BIAS CONFIGURATION
2.5 MAX.
0.5
±
0.2
0.5
±
0.2
1.0
±
0.3
8: VDD
3pF
1-3pF
TMD7185-2
50Ω Matching
1-3pF
1,000pF
10-50µF
2:RF Input
6:RF Output
50Ω Matching
4 : VGG
10-50µF
1,000pF
3pF
GND : Base Plate
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at
260°C.
Flanges of devices should be attached using screws and washers.
Recommended
torque is 0.18-0.20 N·m.
2
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