K4H510438D-ZLB3 datasheet, PDF

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K4H510438D-ZLB3: DescriptionDDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60; Categorystorage storage; File Size391KB，24 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4H510438D-ZLB3 Overview

DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60

K4H510438D-ZLB3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	BGA, BGA60,9X12,40/32
Reach Compliance Code	compliant
Maximum access time	0.7 ns
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PBGA-B60
JESD-609 code	e3
memory density	536870912 bit
Memory IC Type	DDR DRAM
memory width	4
Humidity sensitivity level	1
Number of terminals	60
word count	134217728 words
character code	128000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA60,9X12,40/32
Package shape	RECTANGULAR
Package form	GRID ARRAY
Peak Reflow Temperature (Celsius)	225
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	2,4,8
Maximum standby current	0.005 A
Maximum slew rate	0.36 mA
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	MATTE TIN
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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K4H510438D

K4H510838D

K4H511638D

DDR SDRAM

512Mb D-die DDR SDRAM Specification

60 FBGA with Pb-Free

(RoHS compliant)

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL

INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure could result in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 1.0 March 2006

K4H510438D

K4H510838D

K4H511638D

DDR SDRAM

Table of Contents

1.0 Key Features ...............................................................................................................................4

2.0 Ordering Information ...................................................................................................................4

3.0 Operating Frequencies................................................................................................................4

4.0 Pin Description ...........................................................................................................................5

5.0 Package Physical Dimension ....................................................................................................6

6.0 Block Diagram (32Mbit x4 / 16Mbit x8 / 8Mbit x16 I/O x4 Banks).............................................7

7.0 Input/Output Function Description ............................................................................................8

8.0 Command Truth Table.................................................................................................................9

9.0 General Description...................................................................................................................10

10.0 Absolute Maximum Rating .....................................................................................................10

11.0 DC Operating Conditions ........................................................................................................10

12.0 DDR SDRAM IDD Spec Items & Test Conditions ..................................................................11

13.0 Input/Output Capacitance ......................................................................................................11

14.0 Detailed Test Condition for DDR SDRAM IDD1 & IDD7A ....................................................12

15.0 DDR SDRAM IDD Spec Table .................................................................................................13

16.0 AC Operating Conditions .......................................................................................................14

17.0 AC Overshoot/Undershoot Specification for Address and Control Pins ..........................14

18.0 Overshoot/Undershoot Specification for Data, Strobe and Mask Pins ..............................15

19.0 AC Timming Parameters & Specifications ...........................................................................16

20.0 System Characteristics for DDR SDRAM ..............................................................................17

21.0 Component Notes ....................................................................................................................18

22.0 System Notes ..........................................................................................................................20

23.0 IBIS : I/V Characteristics for Input and Output Buffers ........................................................21

Rev. 1.0 March 2006

K4H510438D-ZLB3 Related Products

	K4H510438D-ZLB3	K4H510438D-ZCCC	K4H510438D-ZCB3	K4H510438D-ZLCC	K4H510838D-ZCB3	K4H511638D-ZCB3	K4H511638D-ZCCC
Description	DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60	DDR DRAM, 128MX4, 0.65ns, CMOS, PBGA60,	DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60,	DDR DRAM, 128MX4, 0.65ns, CMOS, PBGA60	DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60,	DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60	DDR DRAM, 32MX16, 0.65ns, CMOS, PBGA60
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	compliant	unknown	unknown	compliant	unknown	compliant	compliant
Maximum access time	0.7 ns	0.65 ns	0.7 ns	0.65 ns	0.7 ns	0.7 ns	0.65 ns
Maximum clock frequency (fCLK)	166 MHz	200 MHz	166 MHz	200 MHz	166 MHz	166 MHz	200 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8
JESD-30 code	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60
memory density	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	4	4	4	4	8	16	16
Humidity sensitivity level	1	3	3	1	3	3	3
Number of terminals	60	60	60	60	60	60	60
word count	134217728 words	134217728 words	134217728 words	134217728 words	67108864 words	33554432 words	33554432 words
character code	128000000	128000000	128000000	128000000	64000000	32000000	32000000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	128MX4	128MX4	128MX4	128MX4	64MX8	32MX16	32MX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	BGA	BGA	BGA	BGA	BGA	BGA	BGA
Encapsulate equivalent code	BGA60,9X12,40/32	BGA60,9X12,40/32	BGA60,9X12,40/32	BGA60,9X12,40/32	BGA60,9X12,40/32	BGA60,9X12,40/32	BGA60,9X12,40/32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY
Peak Reflow Temperature (Celsius)	225	260	260	225	260	260	260
power supply	2.5 V	2.6 V	2.5 V	2.6 V	2.5 V	2.5 V	2.6 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192	8192
Continuous burst length	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8
Maximum standby current	0.005 A	0.005 A	0.005 A	0.005 A	0.005 A	0.005 A	0.005 A
Maximum slew rate	0.36 mA	0.385 mA	0.36 mA	0.385 mA	0.36 mA	0.38 mA	0.4 mA
Nominal supply voltage (Vsup)	2.5 V	2.6 V	2.5 V	2.6 V	2.5 V	2.5 V	2.6 V
surface mount	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
package instruction	BGA, BGA60,9X12,40/32	-	-	BGA, BGA60,9X12,40/32	-	BGA, BGA60,9X12,40/32	BGA, BGA60,9X12,40/32
JESD-609 code	e3	e1	e1	e3	e1	-	-
Terminal surface	MATTE TIN	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	MATTE TIN	Tin/Silver/Copper (Sn/Ag/Cu)	-	-
Base Number Matches	1	1	1	1	1	-	-

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