STF724
STN724
NPN medium power transistors
Features
■
■
Surface mounting devices in medium power
SOT-223 and SOT-89 packages
Available in tape and reel packaging
2
Applications
■
■
■
Voltage regulation
Relay driver
Generic switch
1
SOT-223
2
3
SOT-89
Description
The STF724 and STN724 are NPN transistors
manufactured using Planar technology resulting in
rugged high performance devices.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking
724
N724
Package
SOT-89
Tape & reel
SOT-223
Packaging
Order code
STF724
STN724
April 2008
Rev 4
1/11
www.st.com
11
STF724 - STN724
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
........................... 5
3
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
STF724 - STN724
1
Electrical ratings
Table 2.
Symbol
Absolute maximum rating
Parameter
STF724
Value
STN724
60
30
5
3
6
1
2
1.4
-65 to 150
150
1.6
V
V
V
A
A
A
A
W
°C
°C
Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
J
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5ms)
Base current
Base peak current (t
P
< 5ms)
Total dissipation at T
amb
= 25°C
Storage temperature
Max. operating junction temperature
Table 3.
Symbol
Thermal data
Parameter
SOT-89
Value
SOT-223
78
°C/W
Unit
R
thj-amb
1.
Thermal resistance junction-ambient
(1)
_max
89
Device mounted on PCB area of 1 cm
2
.
3/11
Electrical characteristics
STF724 - STN724
2
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 4.
Symbol
I
CES
I
CEO
I
EBO
V
(BR)CBO
Electrical characteristics
Parameter
Collector cut-off current
(V
BE
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
Collector-base breakdown
voltage (I
E
= 0)
Test conditions
V
CE
= 60 V
V
CE
= 30 V
V
EB
= 5 V
I
C
= 100 µA
60
Min.
Typ. Max. Unit
10
µA
100
µA
10
µA
V
V
(BR)CEO(1)
Collector-emitter
I = 10 mA
breakdown voltage (I
B
= 0)
C
V
(BR)EBO
Emitter-base breakdown
voltage (I
C
= 0)
I
E
= 100 µA
I
B
= 50 mA
I
B
= 100 mA
I
B
= 15 0mA
I
B
= 100 mA
V
CE
= 2 V
V
CE
= 2 V
V
CE
= 2 V
I
C
= 0.1 A
30
V
5
0.4
0.7
1.1
1.2
100
80
30
100
300
V
V
V
V
V
V
CE(sat) (1)
I
C
= 1 A
Collector-emitter saturation
I
C
= 2 A
voltage
I
C
= 3 A
Base-emitter saturation
voltage
I
C
= 2 A
I
C
= 100 mA
V
BE(sat) (1)
h
FE
DC current gain
I
C
= 1 A
I
C
= 3 A
f
T
Transition frequency
V
CE
= 10 V
MHz
1.
Pulsed duration = 300 µs, duty cycle
≤
1.5 %
4/11
STF724 - STN724
2.1
Electrical characteristics (curves)
Figure 2.
DC Current Gain
Figure 3.
DC Current Gain
Figure 4.
Collector-emitter saturation
voltage
Figure 5.
Base-emitter saturation
voltage
Figure 6.
Switching times on resistive
load
Figure 7.
Switching times on resistive
load
5/11
京公网安备 11010802033920号
EEWORLD
