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K6T1008C2E-GB55T

Description
Standard SRAM, 128KX8, 55ns, CMOS, PDSO32
Categorystorage    storage   
File Size140KB,10 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric Compare View All

K6T1008C2E-GB55T Overview

Standard SRAM, 128KX8, 55ns, CMOS, PDSO32

K6T1008C2E-GB55T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionSOP, SOP32,.56
Reach Compliance Codeunknown
Maximum access time55 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G32
JESD-609 codee0
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP32,.56
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Maximum standby current0.00001 A
Minimum standby current2 V
Maximum slew rate0.05 mA
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Base Number Matches1
K6T1008C2E Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
1.0
History
Design target
Finalize
- Improve t
WP
form 55ns to 50ns for 70ns product.
- Remove 55ns speed bin from industrial product.
Errata correction
Revise
Revise
- Add 55ns parts to industrial products.
Draft Data
October 12, 1998
August 30, 1999
Remark
Preliminary
Final
1.01
2.0
3.0
December 1, 1999
February 14, 2000
March 3, 2000
Final
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 3.0
March 2000

K6T1008C2E-GB55T Related Products

K6T1008C2E-GB55T K6T1008C2E-GP70T K6T1008C2E-GL55T K6T1008C2E-RB70T K6T1008C2E-GF55T
Description Standard SRAM, 128KX8, 55ns, CMOS, PDSO32 Standard SRAM, 128KX8, 70ns, CMOS, PDSO32 Standard SRAM, 128KX8, 55ns, CMOS, PDSO32 Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, Standard SRAM, 128KX8, 55ns, CMOS, PDSO32
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
package instruction SOP, SOP32,.56 SOP, SOP32,.56 SOP, SOP32,.56 TSSOP, TSSOP32,.8,20 SOP, SOP32,.56
Reach Compliance Code unknown unknown unknown compliant compliant
Maximum access time 55 ns 70 ns 55 ns 70 ns 55 ns
I/O type COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32
memory density 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 8 8 8 8 8
Number of terminals 32 32 32 32 32
word count 131072 words 131072 words 131072 words 131072 words 131072 words
character code 128000 128000 128000 128000 128000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 85 °C 70 °C 70 °C 85 °C
organize 128KX8 128KX8 128KX8 128KX8 128KX8
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code SOP SOP SOP TSSOP SOP
Encapsulate equivalent code SOP32,.56 SOP32,.56 SOP32,.56 TSSOP32,.8,20 SOP32,.56
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
power supply 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum standby current 0.00001 A 0.000025 A 0.00002 A 0.00001 A 0.00001 A
Minimum standby current 2 V 2 V 2 V 2 V 2 V
Maximum slew rate 0.05 mA 0.05 mA 0.05 mA 0.05 mA 0.05 mA
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V
surface mount YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL INDUSTRIAL
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 0.5 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL DUAL
Base Number Matches 1 1 1 1 1
JESD-609 code e0 e0 e0 - -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - -
Maker - SAMSUNG SAMSUNG SAMSUNG -
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