T2035H, T2050H
20 A high temperature Snubberless™ Triacs
Datasheet - production data
Description
Available in through-hole or surface mount
packages, these Triacs series are suitable for
general purpose mains power ac switching.
These 20 A Triacs provide a very high switching
capability up to junction temperatures of 150 °C.
The heatsink can be reduced, compared to
traditional Triacs, according to the high
performance at given junction temperatures.
By using an internal ceramic pad, they provide
voltage insulation (rated at 2500 V
RMS
).
Table 1: Device summary
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
20
600
35 or 50
Unit
A
V
mA
Features
Medium current Triac
150 °C max. T
j
turn-off commutation
Low thermal resistance with clip bonding
Very high 3 quadrant commutation capability
Packages are RoHS (2002/95/EC) compliant
UL certified (ref. file E81734)
Applications
Especially designed to operate in high power
density or universal motor applications such as
vacuum cleaner and washing machine drum
motor.
January 2017
DocID13575 Rev 4
1/12
www.st.com
This is information on a product in full production.
Characteristics
T2035H, T2050H
1
Characteristics
Table 2: Absolute ratings (limiting values)
Symbol
RMS on-state current
(full sine wave)
Non repetitive surge peak
on-state current
(full cycle, T
j
initial = 25 °C)
I²t value for fusing
Critical rate of rise of on-state
current
I
G
= 2 x I
GT
, tr ≤ 100 ns
Non repetitive surge peak
off-state voltage
Peak forward gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
f = 120 Hz
Parameter
D²PAK,
TO-220AB
TO-220AB Ins.
f = 50 Hz
f = 60 Hz
T
C
= 128 °C
20
T
C
= 108 °C
t
p
= 20 ms
t
p
= 16.7 ms
t
p
= 10 ms
T
j
= 150 °C
200
A
210
265
50
V
DRM
/V
RRM
+
100
4
1
-40 to +150
-40 to +150
A²s
A/µs
A
Value
Unit
I
T(RMS)
I
TSM
I²t
dl/dt
V
DSM
/
V
RSM
I
GM
P
G(AV)
T
stg
T
j
t
p
= 10 ms
t
p
= 20 µs
T
j
= 25 °C
T
j
= 150 °C
T
j
= 150 °C
V
A
W
°C
°C
Table 3: Electrical characteristics (T
j
= 25 °C unless otherwise specified)
Value
Symbol
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt
(2)
(dI/dt)c
(2)
Notes:
(1)
(2)
Unit
Test Conditions
Quadrant
T2035H
T2050H
50
1.0
0.15
35
50
Max.
II
80
Min.
Min.
1000
27
T
j
= 150 °C
T
j
= 150 °C
75
90
110
1500
36
mA
V/µs
A/ms
V
mA
mA
Max.
Max.
35
V
D
= 12 V, R
L
= 33 Ω
V
D
= V
DRM
, R
L
= 3.3 kΩ
I
T
= 500 mA
I - II - III
I - II - III
Min.
Max.
I - III
I
G
= 1.2 x I
GT
V
D
= 2/3 x V
DRM
, gate open
Without snubber
Minimum I
GT
is guaranteed at 20% of I
GT
max.
For both polarities of A2 referenced to A1.
2/12
DocID13575 Rev 4
T2035H, T2050H
Table 4: Static characteristics
Symbol
V
T
(1)
V
t0
(1)
R
d
(1)
I
TM
= 28 A, t
p
= 380 μs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
I
DRM
/
I
RRM
(2)
T
j
= 150 °C
V
D
/V
R
= 400 V (at peak mains voltage)
V
D
/V
R
= 200 V (at peak mains voltage)
Notes:
(1)
For
(2)
Characteristics
Test conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 25 °C
Max.
Max.
Max.
Max.
Max.
Max.
Max.
Value
1.5
0.80
19
5
6.2
5.0
4.0
mA
Unit
V
V
mΩ
µA
T
j
= 150 °C
T
j
= 150 °C
both polarities of A2 referenced to A1.
t
p
= 380 μs
Table 5: Thermal parameters
Symbol
R
th(j-c)
Junction to case (AC)
Junction to ambient (S
cu
= 1 cm
2
)
R
th(j-a)
Junction to ambient
Parameter
D²PAK,
TO-220AB
TO-220AB Ins.
D²PAK
TO-220AB,
TO-220AB Ins.
Value
1
1.9
45
60
°C/W
Unit
DocID13575 Rev 4
3/12
Characteristics
T2035H, T2050H
1.1
Characteristics (curves)
Figure 1: Maximum power dissipation versus
on-state RMS current
24
22
20
18
16
Figure 2: On-state RMS current versus case
temperature
P(W)
α =180 °
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
I
T(RMS)
(A)
180°
18
20
Figure 3: On-state RMS current versus ambient
temperature
5.0
4.5
4.0
3.5
3.0
2.5
Figure 4: Variation of thermal impedance versus
pulse duration
1.0E+00
I
T(RMS)
(A)
D²PAK
S
CU
=1 cm²
K=[Z
th
/R
th
]
Z
th(j-c)
Z
th(j-a)
1.0E-01
2.0
1.5
1.0
0.5
0.0
α =180 °
1.0E-02
T
amb
(°C)
t
P
(s)
1.0E-03
1.0E-03
0
25
50
75
100
125
150
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Figure 5: On-state characteristics
(maximum values)
Figure 6: Surge peak on-state current versus
number of cycles
4/12
DocID13575 Rev 4
T2035H, T2050H
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse
Characteristics
Figure 8: Relative variation of I
GT
, I
H
, I
L
vs junction
temperature (typical values)
Figure 9: Relative variation of critical rate of
decrease of main current (dI/dt)c versus reapplied
(dV/dt)c
2.0
1.8
Figure 10: Relative variation of critical rate of
decrease of main current versus junction
temperature
8
7
6
(dI/dt )
c
[ (dV/dt)
c
] / specified (dI/dt )
c
typical values
(dI/dt )
c
[T
j
] / (dI/dt)
c
[T
j
= 150°C]
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
(dV/dt)
C
(V/µs)
5
4
3
2
1
T
j
(°C)
0
0.1
1.0
10.0
100.0
0.0
25
50
75
100
125
150
Figure 11: Leakage current versus junction
temperature for different values of blocking
voltage (typical values)
Figure 12: Acceptable repetitive peak off-state
voltage versus case to ambient thermal resistance
R
th(c-a)
(°C/W)
R
th(j-c)
=1.0 °C/W
Tj =150 °C
40
35
30
25
20
15
10
5
V
DRM
/V
RRM
(V)
0
300
350
400
450
500
550
600
DocID13575 Rev 4
5/12
Microchip MCU
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