TD62593,594,597,598AFNG
TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT
SILICON MONOLITHIC
TD62593AFNG, TD62594AFNG, TD62597AFNG, TD62598AFNG
8CH SINGLE DRIVER : COMMON EMITTER
The TD62593, 4, 7, 8AFNG are comprised of eight NPN
Transistor Arrays.
Applications include relay, hammer, lamp and display (LED)
drivers.
The suffix (G) appended to the part number represents a Lead
(Pb)-Free product.
Features
¢
Package Type : SSOP18pin (0.65 mm pitch)
¢
High Sustaining Voltage Output
: 50 V (MIN)
¢
Low Saturation Voltage
: V
CE (sat)
= 0.8 V
@I
OUT
= 150 mA·Inputs Compatible with Various type Logic.
TD62593, TD62597AFNG : R
IN
= 2.7 kΩ TTL, 5 V CMOS
TD62594, TD62598AFNG : R
IN
= 10.5 kΩ 6~15 V PMOS, CMOS
Weight: 0.09 g (typ.)
Pin Connection
(top view)
TD62593AFNG, TD62594AFNG
TD62597AFNG, TD62598AFNG
Schematics
(each driver)
TD62593AFNG, TD62594AFNG
TD62597AFNG, TD62598AFNG
TD62593AFNG
TD62594AFNG
RIN=2.7kΩ
RIN=10.5k
TD62597AFNG
TD62598AFNG
RIN=2.7kΩ
RIN=10.5k
Note:
The input and output parasitic diodes cannot be used as clamp diodes.
1
2007-07-23
TD62593,594,597,598AFNG
Absolute Maximum Ratings
(Ta = 25°C)
CHARACTERISTIC
Collector−Emitter Voltage
Collector−Base Voltage
Clamp Diode Reverse Voltage
Collector Current
Input Voltage
Power Dissipation
Operating Temperature
Storage Temperature
SYMBOL
V
CEO
V
CBO
V
R
(Note 1)
I
C
V
IN
P
D
(Note 2)
T
opr
T
stg
RATING
50
50
50
200
−0.5~30
0.96
−40~85
−55~150
UNIT
V
V
V
mA / ch
V
W
°C
°C
Note 1: Except TD62593AFNG, TD62594AFNG
Note 2: On Glass Epoxy PCB (50 × 50 ×1.6 mm Cu 40%)
Recommended Operating Conditions
(Ta =
−40~85°C)
CHARACTERISTIC
Collector−Emitter Voltage
Collector−Base Voltage
Collector Current
Clamp Diode Reverse Voltage
Input Voltage
Input Current
Input Voltage
(Output On)
Power Dissipation
TD62593AFNG
TD62597AFNG
TD62594AFNG
TD62598AFNG
SYMBOL
V
CEO
V
CBO
I
C
V
R
(Note 1)
V
IN
I
IN
CONDITION
MIN
0
0
0
7
0
0
2.4
V
IN (ON)
7.0
P
D
(Note 2)
―
―
―
25
0.4
W
TYP.
―
―
―
―
―
―
―
MAX
50
50
150
50
25
10
25
V
UNIT
V
V
mA /
ch
V
V
mA
Note 1: Except TD62593AFNG, TD62594AFNG
Note 2: On Glass Epoxy PCB (50 × 50 × 1.6 mm Cu 40%)
Electrical Characteristics
(Ta = 25°C)
CHARACTERISTIC
Output Leakage Current
Output Saturation Voltage
DC Current Transfer Ratio
TD62593AFNG
TD62597AFNG
TD62594AFNG
TD62598AFNG
SYMBOL
I
CEX
V
CE (sat)
h
FE
TEST
CIR−
CUIT
1
2
2
TEST CONDITION
V
CE
= 50 V, V
IN
= 0
I
C
= 10 mA, I
IN
= 0.4 mA
I
C
= 150 mA, I
IN
= 3.0 mA
V
CE
= 10 V, I
C
= 10 mA
V
IN
= 2.4 V, I
C
= 50 mA
I
IN (ON)
3
V
IN
= 7.0 V, I
C
= 50 mA
t
ON
t
OFF
4
V
OUT
= 50 V, R
L
= 330
Ω
―
―
―
―
0.1
0.3
0.9
―
―
µs
MIN
―
―
―
50
―
TYP.
―
―
―
―
―
MAX
10
0.2
0.8
―
0.9
mA
UNIT
µA
V
Input Current
Turn−On Delay
Turn−Off Delay
2
2007-07-23
TD62593,594,597,598AFNG
Test Circuit
1. I
CEX
2. h
FE
, V
CE (sat)
3. I
IN (ON)
4. t
ON
, t
OFF
Note 1: Pulse Width 50 µs, Duty Cycle 10%
Output Impedance 50
Ω,
t
r
≤
5 ns, t
f
≤
10 ns
Note 2: See below
Input Condition
TYPE NUMBER
TD62593AFNG, TD62597AFNG
TD62594AFNG, TD62598AFNG
R
IN
0
Ω
0
Ω
V
IH
3V
10 V
Note 3: C
L
includes probe and jig capacitance
Precautions for Using
This IC does not integrate protection circuits such as overcurrent and overvoltage protectors.
Thus, if excess current or voltage is applied to the IC, the IC may be damaged. Please design the IC so that
excess current or voltage will not be applied to the IC.
Utmost care is necessary in the design of the output line, V
CC
and GND line since IC may be destroyed due to
short−circuit between outputs, air contamination fault, or fault by improper grounding.
3
2007-07-23
TD62593,594,597,598AFNG
TD62593AFNG
TD62597AFNG
TD62594AFNG
TD62598AFNG
4
2007-07-23
TD62593,594,597,598AFNG
Package Dimensions
SSOP18−P−225−0.65
Unit: mm
Weight: 0.09 g (Typ.)
5
2007-07-23
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