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IRFP254A

Description
$GYDQFHG 3RZHU 026)(7
File Size234KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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IRFP254A Overview

$GYDQFHG 3RZHU 026)(7

$GYDQFHG 3RZHU 026)(7
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10µA (Max.) @ V
DS
= 250V
Low R
DS(ON)
: 0.108Ω (Typ.)
1
IRFP254A
BV
DSS
= 250 V
R
DS(on)
= 0.14Ω
I
D
= 25 A
TO-3P
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25°C)
Continuous Drain Current (T
C
=100°C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
(2)
(1)
(1)
(2)
(1)
Value
250
25
15.9
100
±30
781
25
22.1
4.8
221
1.79
- 55 to +150
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
300
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.56
--
40
°C/W
Units
Rev. B
©1999 Fairchild Semiconductor Corporation
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