SEMICONDUCTOR
TECHNICAL DATA
General Description
It s mainly suitable for battery pack or power management
in cell phone, and PDA.
FEATURES
V
DSS
=-20V, I
D
=-10A.
Drain-Source ON Resistance.
: R
DS(ON)
=14m (Max.) @ V
GS
=-4.5V, I
D
=-10A.
: R
DS(ON)
=24m (Max.) @ V
GS
=-2.5V, I
D
=-7.6A.
A
D
P
KMA010P20Q
P-Ch Trench MOSFET
H
T
G
L
8
5
B1 B2
1
4
DIM
A
B1
B2
D
G
H
L
P
T
MILLIMETERS
_
4.85
+
0.2
_
3.94
+
0.2
_
6.02
+
0.3
_
0.4
+
0.1
0.15+0.1/-0.05
_
1.63
+
0.2
_
0.65
+
0.2
1.27
0.20+0.1/-0.05
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
DC
Drain Current
)
SYMBOL
V
DSS
V
GSS
I
D
*
I
DP
*
I
S
*
P
D
*
T
j
T
stg
R
thJA
*
RATING
-20
12
10
48
-2.3
1.6
W
0.625
150
-55 150
80
/W
A
UNIT
V
V
A
FLP-8
Pulsed (Note1)
Source-Drain Diode Current
Drain Power Dissipation
Ta=25
Ta=100
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
* : Surface Mounted on 1
1 FR4 Board, t 5sec.
2007. 3. 22
Revision No : 1
1/5
KMA010P20Q
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Static
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
ON State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
Dynamic
(Note 2)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Note 1) Pulse test : Pulse width 300
, Duty Cycle
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
2%.
V
DD
=-10V, R
D
=1.0 ,
V
GS
=-4.5V, R
G
=6
(Fig.2)
V
DS
=-10V, R
D
=1.0
V
GS
=-4.5V
(Fig.1)
-
-
-
-
-
-
-
36
5
13
10
72
78
108
-
-
-
-
-
ns
-
-
nC
BV
DSS
I
DSS
V
th
I
GSS
R
DS(ON)
I
D(ON)
g
fs
V
SD
I
D
=-250 A, V
GS
=0V,
V
GS
=0V, V
DS
=-20V
V
GS
=0V, V
DS
=-16V, Tj=70
V
DS
=V
GS,
I
D
=-250 A
V
GS
=
12V, V
DS
=0V
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
-20
-
-
-0.6
-
-
-
-48
-
-
-
-
-
-
-
11
18
-
31
-
-
-1
-5
-
100
14
24
-
-
-1.1
m
A
S
V
A
V
nA
V
)
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
SYMBOL
V
GS
=-4.5V, I
D
=-10A
V
GS
=-2.5V, I
D
=-7.6A
V
GS
=-4.5V, V
DS
=-5V
V
DS
=-5V, I
D
=-10A
I
S
=-10A, V
GS
=0V
Note 2) Guaranteed by design. Not subject to production testing.
2007. 3. 22
Revision No : 1
2/5
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