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M58WR064HL

Description
64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst) 1.8V supply Flash memories
File Size2MB,114 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
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M58WR064HL Overview

64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst) 1.8V supply Flash memories

M58WR064HU
M58WR064HL
64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst)
1.8V supply Flash memories
Feature summary
Supply voltage
–V
DD
= 1.7V to 2V for Program, Erase and
Read
– V
DDQ
= 1.7V to 2V for I/O Buffers
– V
PP
= 12V for fast Program (9V tolerant)
Multiplexed address/data
Synchronous / asynchronous read
– Synchronous Burst Read mode: 66MHz
– Random Access: 70ns
Synchronous burst read suspend
Programming time
– 8µs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
Memory blocks
– Multiple Bank Memory Array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
Dual operations
– Program Erase in one Bank while Read in
others
– No delay between Read and Write
operations
Block locking
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
Security
– 128 bit user programmable OTP cells
– 64 bit unique device number
Common Flash Interface (CFI)
100,000 program/erase cycles per block
FBGA
VFBGA44
7.7 x 9mm (ZB)
7.5 × 5mm (ZA)
Electronic signature
– Manufacturer Code: 20h
– Top Device Code,
M58WR064HU: 88C0h
– Bottom Device Code,
M58WR064HL: 88C1h
Package
– ECOPACK®
November 2007
Rev 5
1/114
www.numonyx.com
1

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Description 64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst) 1.8V supply Flash memories 64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst) 1.8V supply Flash memories 64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst) 1.8V supply Flash memories 64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst) 1.8V supply Flash memories 64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst) 1.8V supply Flash memories 64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst) 1.8V supply Flash memories
Is it Rohs certified? - conform to conform to - conform to conform to
Maker - Numonyx ( Micron ) Numonyx ( Micron ) - Numonyx ( Micron ) Numonyx ( Micron )
Parts packaging code - BGA BGA - BGA BGA
package instruction - 7.70 X 9 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44 7.70 X 9 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44 - 7.70 X 9 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44 7.70 X 9 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44
Contacts - 44 44 - 44 44
Reach Compliance Code - unknow unknow - unknow unknow
ECCN code - 3A991.B.1.A 3A991.B.1.A - 3A991.B.1.A 3A991.B.1.A
Maximum access time - 70 ns 70 ns - 70 ns 70 ns
Other features - SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE - SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup block - BOTTOM TOP - BOTTOM TOP
command user interface - YES YES - YES YES
Universal Flash Interface - YES YES - YES YES
Data polling - NO NO - NO NO
JESD-30 code - R-PBGA-B44 R-PBGA-B44 - R-PBGA-B44 R-PBGA-B44
length - 9 mm 9 mm - 9 mm 9 mm
memory density - 67108864 bi 67108864 bi - 67108864 bi 67108864 bi
Memory IC Type - FLASH FLASH - FLASH FLASH
memory width - 16 16 - 16 16
Number of functions - 1 1 - 1 1
Number of departments/size - 8,127 8,127 - 8,127 8,127
Number of terminals - 44 44 - 44 44
word count - 4194304 words 4194304 words - 4194304 words 4194304 words
character code - 4000000 4000000 - 4000000 4000000
Operating mode - ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature - 85 °C 85 °C - 85 °C 85 °C
Minimum operating temperature - -40 °C -40 °C - -40 °C -40 °C
organize - 4MX16 4MX16 - 4MX16 4MX16
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code - VFBGA VFBGA - VFBGA VFBGA
Encapsulate equivalent code - BGA44,8X14,20 BGA44,8X14,20 - BGA44,8X14,20 BGA44,8X14,20
Package shape - RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form - GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH - GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
page size - 4 words 4 words - 4 words 4 words
Parallel/Serial - PARALLEL PARALLEL - PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
power supply - 1.8 V 1.8 V - 1.8 V 1.8 V
Programming voltage - 1.8 V 1.8 V - 1.8 V 1.8 V
Certification status - Not Qualified Not Qualified - Not Qualified Not Qualified
Maximum seat height - 1 mm 1 mm - 1 mm 1 mm
Department size - 4K,32K 4K,32K - 4K,32K 4K,32K
Maximum standby current - 0.00001 A 0.00001 A - 0.00001 A 0.00001 A
Maximum slew rate - 0.05 mA 0.05 mA - 0.05 mA 0.05 mA
Maximum supply voltage (Vsup) - 2 V 2 V - 2 V 2 V
Minimum supply voltage (Vsup) - 1.7 V 1.7 V - 1.7 V 1.7 V
Nominal supply voltage (Vsup) - 1.8 V 1.8 V - 1.8 V 1.8 V
surface mount - YES YES - YES YES
technology - CMOS CMOS - CMOS CMOS
Temperature level - INDUSTRIAL INDUSTRIAL - INDUSTRIAL INDUSTRIAL
Terminal form - BALL BALL - BALL BALL
Terminal pitch - 0.5 mm 0.5 mm - 0.5 mm 0.5 mm
Terminal location - BOTTOM BOTTOM - BOTTOM BOTTOM
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
switch bit - NO NO - NO NO
type - NOR TYPE NOR TYPE - NOR TYPE NOR TYPE
width - 7.7 mm 7.7 mm - 7.7 mm 7.7 mm
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