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RB151_05

Description
1.5 A, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size27KB,2 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
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RB151_05 Overview

1.5 A, SILICON, BRIDGE RECTIFIER DIODE

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
RB151
THRU
RB157
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes
FEATURES
*
*
*
*
*
High reverse voltage to 1000v
Surge overload ratings to 50 amperes peak
Good for printed circuit board assembly
Weight: 1.04 grams
Silver-plated copper leads
RB-15
.360 (9.1)
.340 (8.6)
.150 (3.8)
.130 (3.3)
MECHANICAL DATA
* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O
1.2
(30.5)
MIN.
1.0
(25.4)
MIN.
POS.
LEAD
.032 (0.8)
.028 (0.7)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.220 (5.6)
.180 (4.6)
o
.220 (5.6)
.180 (4.6)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at T
A
= 25 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 1)
Operating Temperature Range
Storage Temperature Range
R
θ
JA
R
θ
JC
T
J
T
STG
36
0
o
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
RB151
50
35
50
RB152
100
70
100
RB153
200
140
200
RB154
400
280
400
1.5
50
RB155
600
420
600
RB156
800
560
800
RB157
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
Amps
12
-55 to + 150
-55 to + 150
C/ W
0
0
C
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per Bridge
Element at 1.0A DC
Maximum Reverse Current at Rated
DC Blocking Voltage per element
@T
A
= 25
o
C
@T
A
= 100
o
C
SYMBOL
V
F
RB151
RB152
RB153
RB154
1.0
5.0
I
R
1
mAmps
2005-3
REV: A
RB155
RB156
RB157
UNITS
Volts
uAmps
NOTE:1.Thermal resistance from junction to ambient and from junction to lead at 0.375” (9.5mm) lead length P.C.B. mounting.
2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.

RB151_05 Related Products

RB151_05 RB151 DB1512S RB156
Description 1.5 A, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, SILICON, BRIDGE RECTIFIER DIODE
Is it lead-free? - Lead free Lead free Lead free
Is it Rohs certified? - conform to conform to conform to
Maker - Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor
package instruction - O-PBCY-W4 R-PDSO-G4 O-PBCY-W4
Contacts - 4 4 4
Reach Compliance Code - _compli compli _compli
Configuration - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials - SILICON SILICON SILICON
Diode type - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code - O-PBCY-W4 R-PDSO-G4 O-PBCY-W4
JESD-609 code - e3 e3 e3
Maximum non-repetitive peak forward current - 50 A 40 A 50 A
Number of components - 4 4 4
Phase - 1 1 1
Number of terminals - 4 4 4
Maximum operating temperature - 150 °C 150 °C 150 °C
Minimum operating temperature - -55 °C -55 °C -55 °C
Maximum output current - 1.5 A 1.5 A 1.5 A
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - ROUND RECTANGULAR ROUND
Package form - CYLINDRICAL SMALL OUTLINE CYLINDRICAL
Peak Reflow Temperature (Celsius) - 265 265 265
Certification status - Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage - 50 V 1200 V 800 V
surface mount - NO YES NO
Terminal surface - Matte Tin (Sn) MATTE TIN Matte Tin (Sn)
Terminal form - WIRE GULL WING WIRE
Terminal location - BOTTOM DUAL BOTTOM
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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