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NXP Semiconductors
Product data sheet
PNP general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 32 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complement: BCW60.
MARKING
TYPE NUMBER
BCW61B
BCW61C
BCW61D
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
MARKING CODE
(1)
BB∗
BC∗
BD∗
Top view
handbook, halfpage
BCW61 series
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−32
−32
−5
−100
−200
−100
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
1999 Apr 12
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BCW61B
BCW61C
BCW61D
DC current gain
BCW61B
BCW61C
BCW61D
DC current gain
BCW61B
BCW61C
BCW61D
V
CEsat
V
BEsat
V
BE
collector-emitter saturation voltage I
C
=
−10
mA; I
B
=
−0.25
mA
I
C
=
−50
mA; I
B
=
−1.25
mA
base-emitter saturation voltage
base-emitter voltage
I
C
=
−10
mA; I
B
=
−0.25
mA
I
C
=
−50
mA; I
B
=
−1.25
mA
I
C
=
−2
mA; V
CE
=
−5
V
I
C
=
−10 μA;
V
CE
=
−5
V
I
C
=
−50
mA; V
CE
=
−1
V
C
c
C
e
f
T
F
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
collector capacitance
emitter capacitance
transition frequency
noise figure
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
−0.5
V; f = 1 MHz
I
C
=
−10
mA; V
CE
=
−5
V;
f = 100 MHz; note 1
I
C
=
−50
mA; V
CE
=
−1
V
80
100
110
−60
−120
−600
−0.68
−600
−
−
−
−
100
I
C
=
−2
mA; V
CE
=
−5
V
180
250
380
CONDITIONS
I
E
= 0; V
CB
=
−32
V
I
E
= 0; V
CB
=
−32
V; T
amb
= 150
°C
I
C
= 0; V
EB
=
−4
V
I
C
=
−10 μA;
V
CE
=
−5
V
30
40
100
MIN.
−
−
−
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
BCW61 series
VALUE
500
UNIT
K/W
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−650
−550
−720
4.5
11
−
2
MAX.
−20
−20
−20
−
−
−
310
460
630
−
−
−
−250
−550
−850
−1.05
−750
−
−
−
−
−
6
UNIT
nA
μA
nA
mV
mV
mV
V
mV
mV
mV
pF
pF
MHz
dB
I
C
=
−200 μA;
V
CE
=
−5
V; R
S
= 2 kΩ;
−
f = 1 kHz; B = 200 Hz
1999 Apr 12
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
PACKAGE OUTLINE
BCW61 series
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
1999 Apr 12
4
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