BZT52B2V4S - BZT52B75S
Taiwan Semiconductor
Small Signal Product
200mW, 2% Tolerance SMD Zener Diode
FEATURES
- Wide zener voltage range selection : 2.4V to 75V
- Surface Mount Device Type
- Moisture sensitivity level 1
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
- VZ Tolerance Selection of ±2%
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
SOD-323F
MECHANICAL DATA
- Case: Flat lead SOD-323F small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight : 4.02 ± 0.5mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Forward Voltage
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction and Storage Temperature Range
(Note 1)
@ I
F
= 10mA
SYMBOL
V
F
P
D
R
θJA
T
J
, T
STG
VALUE
1
200
625
-65 to +150
o
UNIT
V
mW
C/W
o
C
Notes: Valid provided that electrodes are kept at ambient temperature.
Zener I vs. V Characteristics
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
I
ZM
V
ZM
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
ZT
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
Version: D1603
BZT52B2V4S - BZT52B75S
Taiwan Semiconductor
Small Signal Product
Electrical Characteristics
(Ratings at TA=25
o
C ambient temperature unless otherwise specified)
V
F
Forward Voltage = 1V Maximum @ I
F
= 10 mA for all part numbers
Part Number
BZT52B2V4S
BZT52B2V7S
BZT52B3V0S
BZT52B3V3S
BZT52B3V6S
BZT52B3V9S
BZT52B4V3S
BZT52B4V7S
BZT52B5V1S
BZT52B5V6S
BZT52B6V2S
BZT52B6V8S
BZT52B7V5S
BZT52B8V2S
BZT52B9V1S
BZT52B10S
BZT52B11S
BZT52B12S
BZT52B13S
BZT52B15S
BZT52B16S
BZT52B18S
BZT52B20S
BZT52B22S
BZT52B24S
BZT52B27S
BZT52B30S
BZT52B33S
BZT52B36S
BZT52B39S
BZT52B43S
BZT52B47S
BZT52B51S
BZT52B56S
BZT52B62S
BZT52B68S
BZT52B75S
Device
Marking
0Z
1Z
2Z
3Z
4Z
5Z
6Z
7Z
8Z
9Z
AZ
BZ
CZ
DZ
EZ
FZ
GZ
HZ
JZ
KZ
LZ
MZ
NZ
PZ
RZ
SZ
TZ
UZ
VZ
WZ
XZ
YZ
－Z
＝Z
≡Z
＞Z
＜Z
V
Z
Min
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.78
11.76
12.74
14.70
15.68
17.64
19.60
21.56
23.52
26.46
29.40
32.34
35.28
38.22
42.14
46.06
49.98
54.88
60.76
66.64
73.50
@ I
ZT
Nom
2.40
2.70
3.00
3.30
3.60
3.90
4.30
4.70
5.10
5.60
6.20
6.80
7.50
8.20
9.10
10.00
11.00
12.00
13.00
15.00
16.00
18.00
20.00
22.00
24.00
27.00
30.00
33.00
36.00
39.00
43.00
47.00
51.00
56.00
62.00
68.00
75.00
(Volt)
Max
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.22
12.24
13.26
15.30
16.32
18.36
20.40
22.44
24.48
27.54
30.60
33.66
36.72
39.78
43.86
47.94
52.02
57.12
63.24
69.36
76.50
I
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
Z
ZT
@ I
ZT
(Ω)
Max
100
100
100
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
150
170
180
200
215
240
255
I
ZK
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Z
ZK
@ I
ZK
(Ω)
Max
564
564
564
564
564
564
564
470
451
376
141
75
75
75
94
141
141
141
160
188
188
212
212
235
235
282
282
306
329
329
353
353
376
400
423
447
470
I
R
@ V
R
(uA)
Max
45
18
9
4.5
4.5
2.7
2.7
2.7
1.8
0.9
2.7
1.8
0.9
0.63
0.45
0.18
0.09
0.09
0.09
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
V
R
(V)
1
1
1
1
1
1
1
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.0
25.2
27.3
30.1
33.0
35.7
39.2
43.4
47.6
52.5
Notes: 1. The Zener Voltage (V
Z
) is tested under pulse condition of 10ms.
2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±2%.
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest
Taiwan Semiconductor
representative.
4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an
RMS value equal to 10% of the dc zener current(I
ZT
or I
ZK
) is superimposed to I
ZT
or I
ZK
.
Version: D1603
BZT52B2V4S - BZT52B75S
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
Fig. 1 Typical Forward Characteristics
1000
T
A
=25
o
C
Forward Current (mA)
10
100
Zener Current (mA)
100
T
A
=25
o
C
Fig. 2 Zener Breakdown Characteristics
1
10
0.1
1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Forward Voltage (V)
0.01
0
1
2
3
4
5
6
7
8
9
10
11
12
Zener Voltage (V)
Fig. 3 Zener Breakdown Characteristics
100
Power Dissipation (mW)
700
600
Zener Current (mA)
10
500
400
300
200
100
0
15
25
35
45
55
65
75
85
0
Fig. 4 Admissible Power Dissipation Curve
Fig. 3
line 1
line 2
line 3
line 4
line 5
1
0.1
0.01
50
100
150
200
Ambient Temperature (
o
C)
Zener Voltage (V)
line 6
Fig. 5 Typical Capacitance
1000
1000
Fig. 6 Effect of Zener Voltage on Impedence
Fig. 4
Dynamic Impedence(Ohm)
I
Z
=5mA
100
I
Z
=1mA
Capacitance (pF)
100
1V Bias
Fig.5
line 1
line 2
10
10
I
Z
=120mA
1
1
Bias at 50% of V
Z
(Nom)
10
Zener Voltage (V)
100
1
1
10
Zener Voltage (V)
100
Fig. 6
line 1
Version:D1603
Embedded System
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