DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3D to NNCD12D
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(200 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
electromagnetic interference (EMI), the diode assures an endur-
ance of no less than 30 kV, thus making itself most suitable for
external interface circuit protection.
Type NNCD3.3D to NNCD12D Series are into 2PIN Super Mini
Mold Package having allowable power dissipation of 200 mW.
PACKAGE DIMENSIONS
(in millimeters)
2.5 ± 0.15
1.7 ± 0.1
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-4-
2), the product assures the minimum endurance of 30 kV.
• Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
0.9 ± 0.1
0 ± 0.05
0.19
Cathode
Indication
APPLICATIONS
• Circuits for Waveform clipper, Surge absorber.
0.11
+0.05
–0.01
• External interface circuit E.S.D protection.
MAXIMUM RATINGS (T
A
= 25
°
C)
Power Dissipation
Surge Reverse Power
Junction Temperature
Storage Temperature
P
P
RSM
T
j
T
stg
200 mW
85 W (t
T
= 10
µ
s 1 pulse)
150
°C
–55
°C
to +150
°C
Fig. 6
Document No. D11772EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
©
0.3 ± 0.05
1.25 ± 0.1
1996
NNCD3.3D to NNCD12D
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
Dynamic
Impedance
Note 2
Zz (Ω)
MAX.
130
130
130
130
130
130
80
50
30
30
30
30
30
30
35
I
T
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Breakdown Voltage
Note 1
V
BR
(V)
Type Number
MIN.
NNCD3.3D
NNCD3.6D
NNCD3.9D
NNCD4.3D
NNCD4.7D
NNCD5.1D
NNCD5.6D
NNCD6.2D
NNCD6.8D
NNCD7.5D
NNCD8.2D
NNCD9.1D
NNCD10D
NNCD11D
NNCD12D
3.10
3.40
3.70
4.00
4.40
4.82
5.29
5.84
6.44
7.03
7.73
8.53
9.42
10.40
11.38
MAX.
3.50
3.80
4.10
4.49
4.92
5.39
5.94
6.55
7.17
7.87
8.67
9.58
10.58
11.60
12.64
I
T
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Reverse Leakage
I
R
(
µ
A)
Capacitance
C
t
(pF)
TEST
CONDITION
E.S.D Voltage
(kV)
TEST
CONDITION
MAX.
20
10
10
10
10
5
5
5
2
2
2
2
2
2
2
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.5
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
TYP.
220
210
200
180
170
160
140
120
110
90
90
90
80
70
70
MIN.
30
30
30
30
30
30
C = 150 pF
R = 330
Ω
(IEC1000
-4-2)
V
R
= 0 V
f = 1 MHz
30
30
30
30
30
30
30
30
30
Notes 1.
Tested with pulse (40 ms)
2.
Zz is measured at I
T
give a small A.C. signal.
2
NNCD3.3D to NNCD12D
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE
250
P - Power Dissipation - mW
200
30
×
30
×
1.6
P.C.B. (Glass Epoxy)
150
100
50
0
0
25
50
75
100
125
150
T
A
- Ambient Temperature - °C
Fig. 2 I
T
- V
BR
CHARACTERISTICS
NNCD7.5D
NNCD8.2D
NNCD6.8D
NNCD9.1D
Fig. 3 I
T
- V
BR
CHARACTERISTICS
100 m
NNCD3.3D
NNCD3.6D
10 m NNCD3.9D
NNCD4.3D
I
T
- On State Current - A
100 m
10 m
I
T
- On State Current - A
NNCD11D
NNCD10D
NNCD12D
1m
NNCD4.7D
100
µ
10
µ
1
µ
100 n
10 n
1n
NNCD5.1D
NNCD5.6D
NNCD6.2D
1m
100
µ
10
µ
1
µ
100 n
10 n
1n
0
1
2
3
4
5
6
7
8
9 10
0
7
8
9 10 11 12 13 14 15
V
BR
- Breakdown Voltage - V
V
BR
- Breakdown Voltage - V
3
NNCD3.3D to NNCD12D
Fig. 4 Z
Z
- I
T
CHARACTERISTICS
1 000
TYP.
Z
Z
- Dynamic Impedance -
Ω
100
NNCD5.6D
NNCD3.9D
NNCD4.7D
NNCD5.1D
NNCD10D
10
NNCD7.5D
1
0.1
1
10
100
I
T
- On State Current - mA
Fig. 5 TRANSIENT THERMAL IMPEDANCE
5 000
Z
th
- Transient Thermal Impedance - °C/W
1 000
625 °C/W
100
NNCD [ ] D
10
5
1m
10 m
100 m
1
t - Time - s
10
100
Fig. 6 SURGE REVERSE POWER RATING
1 000
T
A
= 25 °C
Non-repetitive
P
RSM
P
RSM
- Surge Reverse Power - W
t
T
100
NNCD [ ] D
10
1
1
µ
10
µ
100
µ
1m
10 m
100 m
t
T
- Pulse Width - s
4
NNCD3.3D to NNCD12D
Sample Application Circuits
Set
Note
Conecter
Micro
com.
PC
(CD ROM)
Palallel
Interface
Interface Cable
Note
Set
Printer, P.C.D, T.V Game etc.
5
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