BYW81HR
Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier
Features
■
■
■
■
■
■
Very small conduction losses
Negligible switching losses
High surge current capability
High avalanche energy capability
Hermetic packages
Target radiation qualification:
– 150 krad (Si) low dose rate
– 1 Mrad high dose rate
ESCC qualified
Figure 1.
Device configurations
Variant 03
BYW81-200CFSY1
TO-254
SMD.5
■
Description
Packaged in hermetic TO-254 or SMD.5, this
device is intended for use in medium voltage, high
frequency switching mode power supplies, high
frequency DC to DC converters, and other
aerospace applications.
The complete ESCC specification for this device
is available from the European Space Agency
web site. ST guarantees full compliance of
qualified parts with such ESCC detailed
specifications.
1
Terminal 1: Anode a
Terminal 2: Common cathode
Terminal 3: Anode b
2
3
The case is not connected to any lead
Variant 05
BYW81-200SHRB
1
Terminal 1: Anode
Terminal 2: Anode
Terminal 3: Cathode
3
2
The lid is not connected to any terminal
Table 1.
Device summary
(1)
ESCC part
number
-
5103/029/03
5103/029/05
Quality level EPPL
Engineering
model
ESCC flight
ESCC flight
-
-
Y
Package
TO-254
TO-254
SMD.5
I
F(AV)
2 x 15 A
2 x 15 A
15 A
200 V
1.15 V
150 °C
V
RRM
V
F (max)
T
j(max)
Order code
BYW81-200CFSY1
BYW81-200CFSYHRB
BYW81-200SHRB
1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q versions.
November 2010
Doc ID 17735 Rev 1
1/9
www.st.com
9
Characteristics
BYW81HR
1
Characteristics
Table 2.
Symbol
Absolute maximum ratings
Characteristic
Forward surge current
(1) (2)
Variant 05
Variant 03 (per diode)
Variant 03 (per device)
Repetitive peak reverse voltage
(3)
Average output rectified current (50% duty cycle)
(2)(4)
Variant 05
Variant 03 (per diode)
Variant 03 (per device)
Forward rms current (per diode)
(2)
Variant 05
Variant 03 (per diode)
Variant 03 (per device)
Operating case temperature range
(5)
Junction temperature
Storage temperature range
(5)
Soldering temperature
TO-254
(6)
SMD.5
(7)
Value
Unit
I
FSM
250
250
500
200
15
15
30
30
30
40
-55 to +150
+150
-55 to +150
+260
+245
A
V
RRM
V
I
O
A
I
F(RMS)
A
T
OP
T
J
T
STG
T
SOL
°C
°C
°C
°C
1. Sinusoidal pulse of 10 ms duration
2. For variant 03 the “per device” ratings apply only when both cathode terminals are tied together.
3. Pulsed, duration 5 ms, F = 50 Hz
4. For T
case
≥
+110°C, derate linearly to 0 A at +150°C.
5. For devices with hot solder dip lead finish all testing performed at T
amb
> +125 °C are carried out in a 100%
inert atmosphere.
6. Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same
lead shall not be resoldered until 3 minutes have elapsed.
7. Duration 5 seconds maximum the same package shall not be resoldered until 3 minutes have elapsed.
Table 3.
Symbol
R
th (j-c)
(1)
Thermal resistance
Parameter
Junction to case
All variants (per diode)
Variant 03 (per device)
(2)
Value
2.3
1.4
Unit
°C/W
1. Package mounted on infinite heatsink.
2. For variant 03 the “per device” ratings apply only when both cathode terminals are tied together.
2/9
Doc ID 17735 Rev 1
BYW81HR
Table 4.
Symbol
s
Characteristics
Electrical measurements at ambiant temperature (per diode), T
amb
= 22 ±3 °C
Characteristic
MIL-STD-750
test method
4016
4011
4021
4001
4031
3101
Limits
Test conditions
Min.
DC method, V
R
= 200 V
Pulse method, I
F
= 10 A
Pulse method, I
F
= 20 A
-
-
-
200
-
-
Max.
20
1.0
1.2
-
220
40
µA
V
V
V
pF
ns
°C/W
Units
I
R
V
F1
(1)
V
F2(1)
V
BR
Reverse current
Forward voltage
Breakdown voltage
Capacitance
Reverse recovery time
Relative thermal impedance,
junction to case
I
R
= 100 µA
V
R
= 10 V, F = 1 MHz
I
F
= 1 A, V
R
= 30 V,
dI
F
/dt = -50 A/µs
I
H
= 15 to 40 A, t
H
= 50 ms
I
M
= 50 mA, t
md
= 100 µs
C
t
rr
Z
th(j-c)
(2)
Calculate
ΔV
F(3)
1. Pulse width
≤
300µs, duty cycle
≤
2%
2. Performed only during screening tests parameter drift values (initial measurements), go-no-go.
3. The limits for
ΔVF
shall be defined by the manufacturer on every lot in accordance with MIL-STD-750 Method 3101 and
shall guarantee the R
th(j-c)
limits specified in maximum ratings.
Table 5.
Symbol
Electrical measurements at high and low temperatures (per diode)
Characteristic
MIL-STD-750
test method
4016
Test
conditions
(1)
Limits
Units
Min.
T
case
= +125 (+0, -5) °C
DC method, V
R
= 200 V
T
case
= +125 (+0, -5) °C
pulse method, I
F
= 10 A
T
case
= +55 (+0, -5) °C
pulse method, I
F
= 10 A
-
-
-
Max.
10
0.85
1.15
mA
V
V
I
R
Reverse current
V
F1
(2)
Forward voltage
4011
1. Read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. Alternatively a
100% inspection may be performed.
2. Pulse width
≤
300µs, duty cycle
≤
2%
Doc ID 17735 Rev 1
3/9
Package information
BYW81HR
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Figure 2.
Metal flange mount package (TO-254
(a)
) 3 lead, dimension definitions
B
R1
H
E
D
ØF
G
C
A
1
R2
2
3
N
ØM
L
K
K
J
ØI
a. The terminal identification is specified by the device configuration. See
Figure 1
for terminal connections
4/9
Doc ID 17735 Rev 1
BYW81HR
Table 6.
Package information
Metal flange mount package (TO-254) 3-lead, dimension values
Dimension in millimetres
Reference
Min.
A
B
C
D
E
ØF
G
H
ØI
(1)
J
K
L
ØM
N
R1
(2)
R2
(3)
1. 3 locations
2. Radius of heatsink flange corner - 4 locations
3. Radius of body corner - 4 locations
Dimlension in inches
Min.
0.535
0.535
0.790
0.248
0.039
0.138
0.665
0.270 BSC
Max.
0.545
0.545
0.800
0.264
0.154
0.154
0.685
Max.
13.84
13.84
20.32
6.7
3.9
3.9
17.4
6.86 BSC
13.59
13.59
20.07
6.3
1
3.5
16.89
0.89
3.81 BSC
3.81 BSC
12.95
3.05 Typ.
-
-
1.65 Typ.
1.14
0.035
0.150 BSC
0.150 BSC
0.045
14.5
0.510
0.120 Typ.
0.571
0.71
1
-
-
0.065
0.028
0.039
Doc ID 17735 Rev 1
5/9
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