Silicon Controlled Rectifier, 604.45A I(T)RMS, 550000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, T72, 3 PIN
| Parameter Name | Attribute value |
| package instruction | DISK BUTTON, O-CEDB-N2 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| Other features | FAST |
| Nominal circuit commutation break time | 20 µs |
| Configuration | SINGLE |
| Critical rise rate of minimum off-state voltage | 200 V/us |
| Maximum DC gate trigger current | 300 mA |
| Maximum DC gate trigger voltage | 3 V |
| JESD-30 code | O-CEDB-N2 |
| Maximum leakage current | 45 mA |
| On-state non-repetitive peak current | 6000 A |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum on-state current | 550000 A |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -45 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | ROUND |
| Package form | DISK BUTTON |
| Certification status | Not Qualified |
| Maximum rms on-state current | 604.45 A |
| Off-state repetitive peak voltage | 1000 V |
| Repeated peak reverse voltage | 1000 V |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | END |
| Trigger device type | SCR |
| Base Number Matches | 1 |
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