4. Switching characteristics are independent of operating junction temperatures.
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2
NTMD4820N
TYPICAL PERFORMANCE CURVES
15
I
D,
DRAIN CURRENT (AMPS)
12.5
10
7.5
5
2.5
0
2.8 V
0
0.5
1.0
1.5
2.0
2.5
3.0
6V
5V
4.5 V
4V
3.8 V
10V
T
J
= 25°C
15
I
D,
DRAIN CURRENT (AMPS)
3.6 V
V
DS
≥
10 V
4.2 V
3.4 V
10
3.2 V
3.0 V
3.5
4.0
5
T
J
= 125°C
T
J
= 25°C
0
T
J
=
−55°C
3
3.5
4
4.5
1
1.5
2
2.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.095
0.085
0.075
0.065
0.055
0.045
0.035
0.025
0.015
0.005
3
4
5
6
7
8
9
10
T
J
= 25°C
I
D
= 7.5 A
0.030
Figure 2. Transfer Characteristics
T
J
= 25°C
0.025
0.020
0.015
0.010
0.005
0
2
V
GS
= 10 V
V
GS
= 4.5 V
4
6
8
10
12
14
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.6
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50
−25
0
25
50
75
100
125
150
100
I
D
= 7.5 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
10000
100000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1000
T
J
= 100°C
3
6
9
12
15
18
21
24
27
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTMD4820N
TYPICAL PERFORMANCE CURVES
T
J
= 25°C
C
iss
V
GS
= 0 V
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
10
9
8
7
6
5
4
3
2
1
0
0
2
I
D
= 7.5 A
T
J
= 25°C
8
12
6
10
4
Q
G
, TOTAL GATE CHARGE (nC)
14
4
0
16
Q
GS
Q
GD
V
DS
QT
V
GS
20
16
12
8
VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
C
oss
C
rss
0
5
10
15
20
25
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
30
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and
Drain−To−Source Voltage vs. Total Charge
1000
I
S
, SOURCE CURRENT (AMPS)
V
DD
= 10 V
I
D
= 1 A
V
GS
= 15 V
t, TIME (ns)
100
t
d(off)
t
f
t
r
t
d(on)
3
V
GS
= 0 V
T
J
= 25°C
2
10
1
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
0
0.3
0.4
0.5
0.6
0.7
0.8
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
100
ID, DRAIN CURRENT (AMPS)
10
ms
10
100
ms
1 ms
1
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
10 ms
75
Figure 10. Diode Forward Voltage vs. Current
I
D
= 11 A
50
25
0.1
dc
0.01
0.1
100
0
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
50
75
100
125
T
J
, STARTING JUNCTION TEMPERATURE (°C)
150
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTMD4820N
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AJ
A
8
5
−X−
B
1
S
4
0.25 (0.010)
M
Y
M
−Y−
G
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0
_
8
_
0.25
0.50
5.80
6.20
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0
_
8
_
0.010
0.020
0.228
0.244
C
−Z−
H
D
0.25 (0.010)
M
SEATING
PLANE
N
X 45
_
0.10 (0.004)
M
J
Z Y
S
X
S
SOLDERING FOOTPRINT*
DIM
A
B
C
D
G
H
J
K
M
N
S
1.52
0.060
STYLE 11:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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