Enable input, active low. When connected high, the device shuts down and draws less
than 1.0μA of current. An internal pull-down resistor is connected to this pin.
Pin Configuration
Fixed OVP Trip
Voltage Version
SC70JW-8
(Top View)
Adjustable OVP Trip
Voltage Version
SC70JW-8
(Top View)
IN
GATE
GND
N/C
1
8
EN
EN
EN
FLT
IN
GATE
GND
OVP
1
8
EN
EN
EN
FLT
2
7
2
7
3
6
3
6
4
5
4
5
2
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4686.2008.02.1.0
PRODUCT DATASHEET
AAT4686
OVPSwitch
TM
Absolute Maximum Ratings
1
Symbol
V
IN
V
OVP
V
FLT
, V
EN
V
GATE
T
J
MOSFET Driver IC with Over-Voltage Protection
Description
IN to GND
OVP to GND
FLT, EN to GND
GATE to GND
Operating Junction Temperature Range
Value
-0.3 to 28
-0.3 to 6.5
-0.3 to 6.5
28
-40 to 150
Units
V
V
V
V
°C
Thermal Characteristics
Symbol
θ
JA
P
D
Description
Maximum Thermal Resistance
Maximum Power Dissipation
2, 3
2
Value
225
440
Units
°C/W
mW
1. Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. Functional operation at conditions other than the operating conditions
specified is not implied. Only one Absolute Maximum Rating should be applied at any one time.
2. Mounted on a FR4 board.
3. Derated 4.4mW/°C above 25°C
4686.2008.02.1.0
www.analogictech.com
3
PRODUCT DATASHEET
AAT4686
OVPSwitch
TM
Electrical Characteristics
1
V
IN
= 5V, T
A
= -40° to 85°C unless otherwise noted. Typical values are at T
A
= 25°C.
Symbol
V
IN
I
Q
MOSFET Driver IC with Over-Voltage Protection
Description
Normal Operation Voltage Range
Operation Quiescent Current
Shutdown Supply Current
Under-Voltage Lockout Threshold
Under-Voltage Lockout Hysteresis
Conditions
V
IN
= 5V, EN = 0V, I
OUT
= 0
EN = IN, V
IN
= 5.5V, V
OUT
= 0
Rising Edge
Min
3
Typ
30
3
0.1
Max
14
50
1
3.3
Units
V
μA
μA
V
V
V
mV
V
mV
V
I
SD(OFF)
V
UVLO
V
UVLO_HYS
Adjustable
Over-Voltage Lockout Threshold, OVP Pin
V
OVP_TH
V
OVP_HYS
Over-Voltage Lockout Threshold Hysteresis, OVP
Fixed
V
OVPT
Over-Voltage Protection Trip Voltage
V
OVP_HYS
Over-Voltage Protection Trip Point Hysteresis, IN Pin
Gate Output
V
GHL
Gate Voltage High Level
V
GLL
I
G
Logic
V
EN(L)
V
EN(H)
I
EN
FLT
OL
FLT
IOL
T
BLK_FLT
T
D_FLT
T
RESP_OV
T
ON
T
R
T
OFF
Gate Voltage Low Level
2
Gate Current
EN Input Low Voltage
EN Input High Voltage
EN Input Leakage
FLT Output Voltage Low
FLT Output Leakage Current
FLT Blanking Time
FLT Assertion Delay Time from Over-Voltage (OV)
Over-Voltage Response Time
Gate Turn On Delay Time
Gate Turn On Fall Time
Gate Turn Off Delay Time
Rising Edge
1.083
1.1
20
6.5
120
1.117
Rising Edge
EN = V
IN
V
IN
V
IN
-
5V
1
0.4
1.6
V
μA
V
V
μA
V
μA
ms
μs
μs
ms
ms
ms
V
EN
= 5.5V or 0V
I
FLT
= 1mA
From De-assertion of OV
From Assertion of OV
V
IN
= 5V, V
OVP
Rise to 1.13V
from 1.07V in 1ns
V
IN
= 5V; C
G
= 400pF
V
IN
= 5V; C
G
= 400pF
V
IN
= 5V; C
G
= 400pF
5
0.5
10
1
0.7
10
4
6
2.0
0.4
1
15
1. The AAT4686 is guaranteed to meet performance specification over the -40 to 85°C operating temperature range and are assured by design, characterization and correlation
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