Plastic Medium-Power Silicon Transistors are designed for general-purpose amplifier
and low speed switching applications.
Features:
•
Collector-Emitter Sustaining Voltage
V
CEO(sus)
= 80V (Minimum).
•
Collector-Emitter Saturation Voltage
V
CE(sat)
= 2.0V (Maximum) at I
C
= 5.0A.
•
DC Current Gain h
FE
= 3000 (Typical) at I
C
= 4.0A.
PNP
2N6668
10 Ampere
Darlington
Power Transistors
PNP Silicon
80 Volts
65 Watts
Dimensions Minimum
A
B
C
D
E
F
G
H
I
Pin 1. Base
2. Collector
3. Emitter
4. Collector(Case)
J
K
L
M
O
14.68
9.78
5.01
13.06
3.57
2.42
1.12
0.72
4.22
1.14
2.20
0.33
2.48
3.70
Maximum
15.31
10.42
6.52
14.62
4.07
3.66
1.36
0.96
4.98
1.38
2.97
0.55
2.98
3.90
TO-220
Dimensions : Millimetres
Page 1
31/05/05 V1.0
2N6668
Darlington Power Transistor
Maximum Ratings
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
-Peak
Base Current
Total Power Dissipation at T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol
V
CEO
80
V
CBO
V
EBO
I
C
I
CM
I
B
P
D
T
J
, T
STG
5.0
10
15
0.25
65
0.52
-65 to +150
W
W/°C
°C
V
Rating
Unit
A
Thermal Characteristics
Characteristic
Thermal Resistance Junction to case
Symbol
Rθjc
Maximum
1.92
Unit
°C/W
Figure 1 - Power Derating
P
D
, Power Dissipation (Watts)
T
C
, Temperature (°C)
Page 2
31/05/05 V1.0
2N6668
Darlington Power Transistor
Electrical Characteristics (T
C
= 25°C unless otherwise noted)
Characteristic
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(I
C
= 200mA, I
B
= 0)
Collector Cut off Current
(V
CE
= 80V, I
B
= 0)
Collector Cut off Current
(V
CE
= 80V, V
BE(off)
= 1.5V)
(V
CE
= 80V, V
BE(off)
= 1.5V, T
C
= 125°C)
Emitter Cut off Current
(V
EB
= 5.0V, I
C
= 0)
ON Characteristics (1)
DC Current Gain
(I
C
= 5.0A, V
CE
= 3.0V)
(I
C
= 10A, V
CE
= 3.0V)
Collector-Emitter Saturation Voltage
(I
C
= 5.0A, I
B
= 10mA)
(I
C
= 10A, I
B
= 100mA)
Base-Emitter On Voltage
(I
C
= 5.0A, V
CE
= 3.0V)
(I
C
= 10A, V
CE
= 3.0V)
Dynamic Characteristics
Small-Signal Current Gain
(I
C
= 1.0A, V
CE
= 5.0V, f = 1.0KHz)
Output Capacitance
(V
CB
= 10V, I
E
= 0, f = 1.0MHz)
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤2.0%.
DC Current Gain
V
CE
, Collector Emitter Voltage (Volts)
Collector Saturation Region
h
fe
C
ob
1000
-
-
200
-
pF
h
FE
1000
100
-
20,000
-
Symbol
Minimum
Maximum
Unit
V
CEO(SUS)
I
CEO
I
CEX
I
EBO
80
-
-
-
-
1.0
0.3
3.0
5.0
V
mA
V
CE(sat)
2.0
3.0
V
2.8
4.5
V
BE(on)
-
h
FE
, DC Current Gain
I
C
, Collector Current (AMP)
I
B
, Base Current (mA)
Page 3
31/05/05 V1.0
2N6668
Darlington Power Transistor
“ON” Voltages
Switching Time
V, Voltage (Volts)
I
C
, Collector Current (AMP)
t, Time (µs)
I
C
, Collector Current (AMP)
Active-Region Safe Operating Area (SOA)
There are two limitations on the power handling ability of a
I
C
, Collector Current (AMP)
transistor:average junction temperature and second breakdown
safe operating area curves indicate I
C-
V
CE
limits of the
transistor that must be observed for reliable operation i.e., the
transistor must not be subjected to greater dissipation than the
curves indicate.
The data of SOA curve is based on T
J(PK)
= 150°C; Tc is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(PK)
≤150°C,
At
high case temperatures, thermal limitation will reduce the power
that can be handled to values less than the limitations imposed
by second breakdown.
V
CE
, Collector Emitter Voltage (Volts)
Specifications
I
C(av)
maximum
(A)
10
V
CEO
maximum
(V)
80
h
FE
minimum
at I
C
= 5A
1000
P
tot
at 25°C
(W)
65
Package
TO-220
Type
PNP
Part Number
2N6668
Page 4
31/05/05 V1.0
2N6668
Darlington Power Transistor
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