HUR820
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Dimensions TO-220AC
A
C(TAB)
A
C
C
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
A=Anode, C=Cathode, TAB=Cathode
HUR820
V
RSM
V
200
V
RRM
V
200
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
-
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
-
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
T
C
=25
o
C
mounting torque
typical
o
Test Conditions
T
C
=150 C; rectangular, d=0.5
T
VJ
=45
o
C; t
p
=10ms (50Hz), sine
T
VJ
=25
o
C; non-repetitive; I
AS
=2A; L=180uH
V
A
=1.5
.
V
R
typ.; f=10kHz; repetitive
Maximum Ratings
35
8
80
0.5
0.2
-55...+175
175
-55...+150
60
0.4...0.6
2
Unit
A
A
mJ
A
o
C
W
Nm
g
HUR820
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol
T
VJ
=25
o
C; V
R
=V
RRM
T
VJ
=150
o
C; V
R
=V
RRM
I
F
=8A; T
VJ
=150
o
C
T
VJ
=25
o
C
Test Conditions
Characteristic Values
typ.
max.
50
0.2
0.94
1.30
2.5
0.5
Unit
uA
mA
V
K/W
ns
I
R
V
F
R
thJC
R
thCH
t
rr
I
RM
I
F
=1A; -di/dt=50A/us; V
R
=30V; T
VJ
=25
o
C
V
R
=100V; I
F
=10A; -di
F
/dt=100A/us; T
VJ
=100
o
C
25
4.1
A
FEATURES
* International standard package
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low I
RM
-values
* Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* Avalanche voltage rated for reliable
operation
* Soft reverse recovery for low
EMI/RFI
* Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch