MBR30100PT thru MBR30200PT
Wide Temperature Range and High T
jm
Schottky Barrier Rectifiers
A
C(TAB)
A
C
A
C
A
Dimensions TO-247AD
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Millimeter
Min. Max.
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32
5.4
1.65
-
1.0
10.8
4.7
0.4
1.5
5.49
6.2
2.13
4.5
1.4
11.0
5.3
0.8
2.49
Inches
Min.
Max.
0.780
0.819
0.610
0.140
0.170
0.212
0.065
-
0.040
0.426
0.185
0.016
0.087
0.800
0.845
0.640
0.144
0.216
0.244
0.084
0.177
0.055
0.433
0.209
0.031
0.102
A=Anode, C=Cathode, TAB=Cathode
V
RRM
V
100
150
200
V
RMS
V
70
105
140
V
DC
V
100
150
200
MBR30100PT
MBR30150PT
MBR30200PT
Symbol
I
(AV)
I
FSM
dv/dt
Characteristics
Maximum Average Forward Rectified Current
@T
C
=125
o
C
Maximum Ratings
30
250
10000
I
F
=15A
I
F
=15A
I
F
=30A
I
F
=30A
@T
J
=25
o
C
@T
J
=125
o
C
@T
J
=25
o
C
@T
J
=125
o
C
@T
J
=25
o
C
@T
J
=125
o
C
0.85
0.70
0.98
0.85
0.05
10
2.2
700
-55 to +150
-55 to +150
Unit
A
A
V/us
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Voltage Rate Of Change (Rated V
R
)
Maximum Forward
Voltage (Note 1)
V
F
V
I
R
R
OJC
C
J
T
J
T
STG
Maximum DC Reverse Current
At Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
mA
o
C/W
pF
o
o
Typical Junction Capacitance Per Element (Note 3)
Operating Temperature Range
Storage Temperature Range
C
C
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low V
F
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-247AD molded plastic
* Polarity: As marked on the body
* Weight: 0.2 ounces, 5.6 grams
* Mounting position: Any
MBR30100PT thru MBR30200PT
Wide Temperature Range and High T
jm
Schottky Barrier Rectifiers
1000
100
T
J
=175
¢J
REVERSE CURRENT, I
R
(mA)
10
T
J
=150
¢J
T
J
=125
¢J
T
J
=100
¢J
T
J
=75
¢J
1
0.1
100
0.01
INSTANTANEOUS FORWARD CURRENT, I
F
(A)
T
J
=50
¢J
T
J
=25
¢J
0.001
T
J
=175
¢J
T
J
=125
¢J
T
J
=25
¢J
10
0.0001
0
20
40
60
80
100
REVERSE VOLTAGE, V
R
(V)
Figure 2. Typical Values Of Reverse Current
Vs. Reverse Voltage (Per Leg)
1000
1
JUNCTION CAPACITANCE, C
T
(pF)
T
J
=25
¢J
0.1
0
0.5
1
1.5
2
2.5
100
0
20
40
60
80
100
FORWARD VOLTAGE DROP, V
FM
(V)
REVERSE VOLTAGE, V
R
(V)
Figure 1. Max. Forward Voltage Drop
Characteristics (PerLeg)
Figure 3. Typical Junction Capacitance Vs.
Reverse Voltage (Per Leg)
10
THERMAL IMPEDANCE Z
thJC
(C/W)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
0.1
D = 0.08
P
DM
t1
t2
0.01
SINGLE PULSE
(THERMAL RESISTANCE)
Notes:
1.Duty factor D = t1 / t2
2.Peak T
j
= P
DM
x Z
thJC
+ T
C
0.001
0.0000
1
0.0001
0.001
0.01
0.1
1
10
100
t1, RECTANGULAR PULSE DURATION (SECONDS)
Figure 4. Max. Thermal Impedance Z
thJC
Characteristics (PerLeg)
MBR30100PT thru MBR30200PT
Wide Temperature Range and High T
jm
Schottky Barrier Rectifiers
180
14
D = 0.20
ALLOWABLE CASE TEMPERATURE,
RTHJC(DC)=2.20
J
/W
170
165
160
DC
155
150
145
140
0
5
10
15
20
25
30
35
AVERAGE POWER LOSS, WATTS
175
12
10
8
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS LIMIT
DC
6
4
2
0
0
2
4
6
8
10 12 14 16 18 20 22 24
AVERAGE FORWARD CURRENT, I
F
(AV)
AVERAGE FORWARD CURRENT, I
F
(AV)
Figure 5. Max. Allowable Case Temperature
Vs. Average Forward Current (PerLeg)
Figure 6. Forward PowerLoss Characteristics
(PerLeg)
1000
NON-REPETITIVE SURGE CURRENT,
I
FSM
(A)
AT ANY RATED LOAD CONDITION
AND WITH RATED V
RRM
APPLIED
FOLLOWING SURGE
100
10
100
1000
10000
SQUARE WAVE PULSE DURATION, T
P
(micro sec)
Figure 7. Max. Non-Repetitive Surge Current
(Per Leg)
PCB Design
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