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SGSF565

Description
10A, 600V, NPN, Si, POWER TRANSISTOR, TO-3
CategoryDiscrete semiconductor    The transistor   
File Size162KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

SGSF565 Overview

10A, 600V, NPN, Si, POWER TRANSISTOR, TO-3

SGSF565 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Reach Compliance Codenot_compliant
Other featuresHOLLOW-EMITTER
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment150 W
Maximum power dissipation(Abs)140 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)3900 ns
Maximum opening time (tons)1200 ns
VCEsat-Max1.5 V
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