IRF9Z24NSPBF datasheet, PDF - EEWORLD Datasheet

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IRF9Z24NSPBF: Description12 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size388KB，11 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRF9Z24NSPBF Overview

12 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET

IRF9Z24NSPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
package instruction	LEAD FREE, PLASTIC, D2PAK-3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	96 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (Abs) (ID)	12 A
Maximum drain current (ID)	12 A
Maximum drain-source on-resistance	0.175 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	45 W
Maximum pulsed drain current (IDM)	48 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrie
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PD- 95770

IRF9Z24NSPbF

IRF9Z24NLPBF

Lead-Free

www.irf.com

1

04/25/05

IRF9Z24NSPBF Related Products

	IRF9Z24NSPBF	IRF9Z24NLPBF
Description	12 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET	12 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET
Is it Rohs certified?	conform to	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	LEAD FREE, PLASTIC, D2PAK-3	LEAD FREE, PLASTIC, TO-262, 3 PIN
Contacts	3	3
Reach Compliance Code	_compli	not_compliant
ECCN code	EAR99	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY	AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	96 mJ	96 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V	55 V
Maximum drain current (Abs) (ID)	12 A	12 A
Maximum drain current (ID)	12 A	12 A
Maximum drain-source on-resistance	0.175 Ω	0.175 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSIP-T3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	45 W	45 W
Maximum pulsed drain current (IDM)	48 A	48 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrie	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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