IRFR2607ZPBF datasheet, PDF - EEWORLD Datasheet

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IRFR2607ZPBF: Description42 A, 75 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA; CategoryDiscrete semiconductor The transistor; File Size346KB，12 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRFR2607ZPBF Overview

42 A, 75 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

IRFR2607ZPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-252AA
package instruction	LEAD FREE, PLASTIC, DPAK-3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	96 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	75 V
Maximum drain current (Abs) (ID)	45 A
Maximum drain current (ID)	42 A
Maximum drain-source on-resistance	0.022 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	110 W
Maximum pulsed drain current (IDM)	180 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrie
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

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PD - 95953

AUTOMOTIVE MOSFET

Features

IRFR2607ZPbF

IRFU2607ZPbF

HEXFET

Power MOSFET

Description

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

DSS

= 75V

DS(on)

= 22mΩ

Specifically designed for Automotive applications,

this HEXFET

Power MOSFET utilizes the latest

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of

this design are a 175°C junction operating tempera-

ture, fast switching speed and improved repetitive

avalanche rating . These features combine to make

this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety

of other applications.

= 42A

D-Pak

IRFR2607Z

Max.

180

110

0.72

± 20

I-Pak

IRFU2607Z

Units

Absolute Maximum Ratings

Parameter

@ T

= 25°C Continuous Drain Current, V

@ 10V

(Silicon Limited)

@ T

= 100°C Continuous Drain Current, V

@ 10V

@ T

= 25°C Continuous Drain Current, V

@ 10V

(Package Limited)

Pulsed Drain Current

= 25°C Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

W/°C

AS (Thermally limited)

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

(Tested )

STG

Avalanche Current

See Fig.12a, 12b, 15, 16

-55 to + 175

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

°C

300 (1.6mm from case )

10 lbf in (1.1N m)

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

θJC

θJA

Junction-to-Case

Parameter

Typ.

Max.

1.38

110

Units

°C/W

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

–––

www.irf.com

12/21/04

IRFR2607ZPBF Related Products

	IRFR2607ZPBF	IRFU2607ZPBF
Description	42 A, 75 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	42 A, 75 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Parts packaging code	TO-252AA	TO-251AA
package instruction	LEAD FREE, PLASTIC, DPAK-3	LEAD FREE, PLASTIC, IPAK-3
Contacts	3	3
Reach Compliance Code	_compli	_compli
ECCN code	EAR99	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	96 mJ	96 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	75 V	75 V
Maximum drain current (Abs) (ID)	45 A	45 A
Maximum drain current (ID)	42 A	42 A
Maximum drain-source on-resistance	0.022 Ω	0.022 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA	TO-251AA
JESD-30 code	R-PSSO-G2	R-PSIP-T3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	110 W	110 W
Maximum pulsed drain current (IDM)	180 A	180 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrie	Matte Tin (Sn) - with Nickel (Ni) barrie
Terminal form	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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