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AT49BV010-15TJ

Description
Flash, 128KX8, 150ns, PDSO32, 20 X 8 MM, PLASTIC, MO-142BD, TSOP-32
Categorystorage    storage   
File Size449KB,14 Pages
ManufacturerAtmel (Microchip)
Environmental Compliance
Download Datasheet Parametric View All

AT49BV010-15TJ Overview

Flash, 128KX8, 150ns, PDSO32, 20 X 8 MM, PLASTIC, MO-142BD, TSOP-32

AT49BV010-15TJ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTSOP1
package instruction20 X 8 MM, PLASTIC, MO-142BD, TSOP-32
Contacts32
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time150 ns
JESD-30 codeR-PDSO-G32
JESD-609 codee3
length18.4 mm
memory density1048576 bit
Memory IC TypeFLASH
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage2.7 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
typeNOR TYPE
width8 mm
Base Number Matches1
Features
Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Fast Read Access Time – 55 ns
Internal Program Control and Timer
8K Bytes Boot Block With Lockout
Fast Erase Cycle Time – 10 seconds
Byte-by-byte Programming – 30 µs/Byte typical
Hardware Data Protection
DATA Polling for end of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50 µA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memo-
ries organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced
nonvolatile CMOS technology, the devices offer access times to 55 ns with power dis-
sipation of just 90 mW over the commercial temperature range. When the devices are
deselected, the CMOS standby current is less than 50 µA.
To allow for simple in-system reprogrammability, the AT49(H)BV/(H)LV010 does not
require high input voltages for programming. Three-volt-only commands determine
the read and programming operation of the device. Reading data out of the device is
similar to reading from an EPROM. Reprogramming the AT49(H)BV/(H)LV010 is per-
formed by erasing the entire 1 megabit of memory and then programming on a byte by
byte basis. The typical byte programming time is a fast 30 µs. The end of a program
cycle can be optionally detected by the DATA polling feature. Once the end of a byte
program cycle has been detected, a new access for a read or program can begin.
The typical number of program and erase cycles is in excess of 10,000 cycles.
(continued)
1-megabit
(128K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV010
AT49HBV010
AT49LV010
AT49HLV010
Not Recommended
for New Design
Contact
Atmel to discuss
the latest design in trends
and options
Pin Configurations
Pin Name
A0 - A16
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
A11
A9
A8
A13
A14
NC
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
PLCC Top View
A12
A15
A16
NC
VCC
WE
NC
14
15
16
17
18
19
20
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
5
6
7
8
9
10
11
12
13
4
3
2
1
32
31
30
29
28
27
26
25
24
23
22
21
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
Rev. 0677E–11/99
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
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