DB-2933-54 datasheet, PDF - EEWORLD Datasheet

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DB-2933-54: DescriptionRF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs; CategoryWireless rf/communication Radio frequency and microwave; File Size652KB，13 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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DB-2933-54 Overview

RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs

DB-2933-54 Parametric

Parameter Name	Attribute value
Reach Compliance Code	unknow
structure	MODULE
Gain	16.2 dB
Maximum input power (CW)	40 dBm
Maximum operating frequency	54 MHz
Minimum operating frequency	1.6 MHz
RF/Microwave Device Types	NARROW BAND HIGH POWER
Maximum voltage standing wave ratio	3
Base Number Matches	1

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DB-2933-54

RF POWER amplifier using 2 x SD2933

N-Channel enhancement-mode lateral MOSFETs

General feature

■

Excellent thermal stability

Frequency: 1.6 - 54MHz

Supply voltage: 48V

Output power: 400W typ.

Input power 10W max.

Efficiency: 57% - 76%

IMD at 300WPEP < -26dBc

Load mismatch: 3:1all phases

Description

The DB-2933-54 is a RF broadband power

amplifier intended for linear or nonlinear operation

over the band 1.6 to 54 MHz using 2x SD2933

gold metallized N-channel MOS field-effect

transistors. The temperature compensating

biasing circuit supports class B and class AB

operation.

DB-2933-54 is designed in cooperation with

Specific RF Devices.

(e-mail : specific.rf.devices@t-online.de)

Order Code

■

DB-2933-54

October 2006

Rev 1

1/13

www.st.com

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