ZTX658
ZTX658
NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
MAX.
MHz
10
ns
ns
I
C
=100mA, V
C
=100V
I
B1
=10mA, I
B2
=-20mA
pF
I
C
=20mA, V
CE
=20V
f=20MHz
V
CB
=20V, f=1MHz
UNIT
CONDITIONS.
PARAMETER
SYMBOL
MIN.
TYP.
Transition Frequency f
T
50
ISSUE 2 – APRIL 2002
FEATURES
* 400 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
=1 Watt
C
B
Output capcitance
C
obo
APPLICATIONS
* Telephone dialler circuits
E
Switching times
t
on
t
off
130
3300
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
SYMBOL
400
400
5
1
500
1
5.7
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
mA
W
mW/ °C
-55 to +200
°C
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
THERMAL CHARACTERISTICS
MAX.
Power Dissipation at T
amb
=25°C
derate above 25°C
UNIT
Continuous Collector Current
PARAMETER
SYMBOL
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
175
116
70
R
th(j-amb)1
R
th(j-amb)2
†
R
th(j-case)
°C/W
°C/W
°C/W
Operating and Storage Temperature Range
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
SYMBOL MIN.
V
(BR)CBO
V
(BR)CEO)
V
(BR)EBO
I
CBO
I
CBO
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
0.1
1
10
100
TYP.
400
400
5
MAX.
UNIT
V
V
V
100
100
100
V
CE(sat)
nA
nA
nA
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=320V
V
CE
=320V
V
EB
=4V
2.5
D=1 (D.C.)
200
t
1
D=t
1
/t
P
t
P
D=0.5
2.0
C
as
1.5
e
te
m
pe
1.0
D=0.2
D=0.1
Single Pulse
Am
ra
100
bie
tu
nt t
re
em
Max Power Dissipation - (Watts)
0
0.001
0.01
-40 -20
0
Thermal Resistance (°C/W)
0.5
per
at u
re
20 40
60 80 100 120 140 160 180 200
0
0.0001
0.3
0.25
0.5
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
50
50
40
0.9
0.9
V
V
V
V
V
I
C
=20mA, I
B
=1mA
I
C
=50mA, I
B
=5mA*
I
C
=100mA, I
B
=10mA*
I
C
=100mA, I
B
=10mA*
IC=100mA, V
CE
=5V*
I
C
=1mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=10V*
T -Temperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-230
3-229
ZTX658
ZTX658
NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
MAX.
MHz
10
ns
ns
I
C
=100mA, V
C
=100V
I
B1
=10mA, I
B2
=-20mA
pF
I
C
=20mA, V
CE
=20V
f=20MHz
V
CB
=20V, f=1MHz
UNIT
CONDITIONS.
PARAMETER
SYMBOL
MIN.
TYP.
Transition Frequency f
T
50
ISSUE 2 – APRIL 2002
FEATURES
* 400 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
=1 Watt
C
B
Output capcitance
C
obo
APPLICATIONS
* Telephone dialler circuits
E
Switching times
t
on
t
off
130
3300
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
SYMBOL
400
400
5
1
500
1
5.7
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
mA
W
mW/ °C
-55 to +200
°C
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
THERMAL CHARACTERISTICS
MAX.
Power Dissipation at T
amb
=25°C
derate above 25°C
UNIT
Continuous Collector Current
PARAMETER
SYMBOL
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
175
116
70
R
th(j-amb)1
R
th(j-amb)2
†
R
th(j-case)
°C/W
°C/W
°C/W
Operating and Storage Temperature Range
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
SYMBOL MIN.
V
(BR)CBO
V
(BR)CEO)
V
(BR)EBO
I
CBO
I
CBO
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
0.1
1
10
100
TYP.
400
400
5
MAX.
UNIT
V
V
V
100
100
100
V
CE(sat)
nA
nA
nA
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=320V
V
CE
=320V
V
EB
=4V
2.5
D=1 (D.C.)
200
t
1
D=t
1
/t
P
t
P
D=0.5
2.0
C
as
1.5
e
te
m
pe
1.0
D=0.2
D=0.1
Single Pulse
Am
ra
100
bie
tu
nt t
re
em
Max Power Dissipation - (Watts)
0
0.001
0.01
-40 -20
0
Thermal Resistance (°C/W)
0.5
per
at u
re
20 40
60 80 100 120 140 160 180 200
0
0.0001
0.3
0.25
0.5
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
50
50
40
0.9
0.9
V
V
V
V
V
I
C
=20mA, I
B
=1mA
I
C
=50mA, I
B
=5mA*
I
C
=100mA, I
B
=10mA*
I
C
=100mA, I
B
=10mA*
IC=100mA, V
CE
=5V*
I
C
=1mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=10V*
T -Temperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-230
3-229
ZTX658
TYPICAL CHARACTERISTICS
I
C
/I
B
=10
1.6
T
amb
=25°C
1.4
I
C
/I
B
=10
I
C
/I
B
=20
I
C
/I
B
=50
1.6
1.4
-55°C
+25°C
+100°C
+175°C
1.2
1.2
1.0
1.0
0.8
0.8
V
CE(sat)
- (Volts)
0.4
V
CE(sat)
- (Volts)
0.6
0.6
0.4
0.2
0.01
0.1
1
10
20
0.2
0
0.001
0.01
0.1
1
10
20
0
0.001
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
V
CE(sat)
v I
C
1.6
V
CE
=10V
I
C
/I
B
=10
1.4
+100°C
+25°C
-55°C
1.6
300
1.4
-55°C
+25°C
+100°C
+175°C
1.2
1.2
1.0
200
1.0
0.8
0.8
h
FE
- Normalised Gain
0.2
0.01
0.1
1
10
20
h
FE
- Typical gain
0.4
V
BE(sat)
- (Volts)
0.6
100
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10 20
0
0.001
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
Single Pulse Test at T
amb
=25°C
V
BE(sat)
v I
C
1.0
1.6
1.4
-55°C
+25°C
+100°C
+175°C
V
CE
=10V
1.2
0.1
1.0
V
BE
- (Volts)
0.8
0.6
0.01
0.2
0
0.001
10
0.01
0.1
1
10 20
I
C
- Collector Current (Amps)
0.4
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
100
1000
1
I
C
-
Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
V
BE(on)
v I
C
Safe Operating Area
3-231
Microcontroller MCU
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