DQ52B13H-200 datasheet, PDF - EEWORLD Datasheet

DQ52B13H-200: DescriptionEEPROM, 2KX8, 200ns, Parallel, MOS, CDIP24; Categorystorage storage; File Size396KB，8 Pages; ManufacturerLSC/CSI; Websitehttps://lsicsi.com

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DQ52B13H-200 Overview

EEPROM, 2KX8, 200ns, Parallel, MOS, CDIP24

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	DIP, DIP24,.6
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	200 ns
Other features	10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS
command user interface	NO
Data polling	NO
Data retention time - minimum	10
JESD-30 code	R-GDIP-T24
JESD-609 code	e0
memory density	16384 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	24
word count	2048 words
character code	2000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2KX8
Output characteristics	3-STATE
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Encapsulate equivalent code	DIP24,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	MOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO
Base Number Matches	1

This Material Copyrighted By Its Respective Manufacturer

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