BYC10X-600P
Hyperfast power diode
9 May 2014
Product data sheet
1. General description
Hyperfast power diode in a SOD113A (2-lead TO-220-F) plastic package.
2. Features and benefits
•
•
•
•
•
•
Fast switching
Isolated plastic package
Low leakage current
Low reverse recovery current
Low thermal resistance
Reduces switching losses in associated MOSFET or IGBT
3. Applications
•
•
•
Active PFC in air conditioner
High frequency switched-mode power supplies
Continuous Current Mode (CCM) Power Factor Correction (PFC)
4. Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average forward
current
δ = 0.5; T
h
≤ 61 °C; square-wave pulse;
Fig. 1; Fig. 2; Fig. 3
I
F
= 10 A; T
j
= 150 °C;
Fig. 6
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 200 A/µs;
T
j
= 25 °C;
Fig. 7
-
1.3
2
V
Conditions
Min
-
-
Typ
-
-
Max
600
10
Unit
V
A
Static characteristics
V
F
t
rr
forward voltage
Dynamic characteristics
reverse recovery time
-
12
18
ns
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TO
-22
0F
NXP Semiconductors
BYC10X-600P
Hyperfast power diode
5. Pinning information
Table 2.
Pin
1
2
mb
Pinning information
Symbol Description
K
A
n.c.
cathode
anode
mounting base; isolated
Simplified outline
mb
Graphic symbol
K
A
001aaa020
1
2
TO-220F (SOD113A)
6. Ordering information
Table 3.
Ordering information
Package
Name
BYC10X-600P
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 2-lead TO-220F "full pack"
Version
SOD113A
Type number
7. Marking
Table 4.
Marking codes
Marking code
BYC10X-600P
Type number
BYC10X-600P
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
DC
δ = 0.5; T
h
≤ 61 °C; square-wave pulse;
Fig. 1; Fig. 2; Fig. 3
δ = 0.5; t
p
= 25 µs; T
h
≤ 61 °C; square-
wave pulse
BYC10X-600P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Conditions
Min
-
-
-
-
-
Max
600
600
600
10
20
Unit
V
V
V
A
A
Product data sheet
9 May 2014
2/9
NXP Semiconductors
BYC10X-600P
Hyperfast power diode
Symbol
I
FSM
Parameter
non-repetitive peak forward
current
Conditions
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
Min
-
-
-65
-
Max
150
165
175
175
aaa-010182
Unit
A
A
°C
°C
T
stg
T
j
35
storage temperature
junction temperature
aaa-010181
P
tot
(W)
30
25
20
15
10
5
0
0.1
0.2
0.5
25
P
tot
(W)
20
2.8
15
4.0
2.2
δ=1
a = 1.57
1.9
10
5
0
5
10
I
F(AV)
(A)
15
0
0
2.5
5
7.5
I
F(AV)
(A)
10
Fig. 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig. 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
15
I
F(AV)
(A)
10
aaa-010187
10
4
I
FSM
(A)
aaa-010184
61 °C
10
3
5
10
2
I
F
I
FSM
0
-50
0
50
100
150
200
T
h
(°C)
10
10
-5
t
t
p
T
j(init)
= 25 °C max
10
-4
10
-3
t
p
(s)
10
-2
Fig. 3.
Forward current as a function of heatsink
temperature; maximum values
Fig. 4.
Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;
maximum values
© NXP Semiconductors N.V. 2014. All rights reserved
BYC10X-600P
All information provided in this document is subject to legal disclaimers.
Product data sheet
9 May 2014
3/9
NXP Semiconductors
BYC10X-600P
Hyperfast power diode
9. Thermal characteristics
Table 6.
Symbol
R
th(j-h)
Thermal characteristics
Parameter
thermal resistance
from junction to
heatsink
thermal resistance
from junction to
ambient
10
Z
th(j-h)
(K/W)
1
Conditions
with heatsink compound;
Fig. 5
Min
-
Typ
-
Max
4.8
Unit
K/W
R
th(j-a)
in free air
-
55
-
K/W
aaa-010188
10
-1
δ = 0.5
δ = 0.3
δ = 0.1
δ = 0.05
δ = 0.02
δ = 0.01
single pulse
t
p
T
P
δ=
10
-2
t
p
T
10
-3
t
10
-4
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
10
Fig. 5.
Transient thermal impedance from junction to heatsink as a function of pulse duration
10. Isolation characteristics
Table 7.
Symbol
V
isol(RMS)
Isolation characteristics
Parameter
RMS isolation voltage
Conditions
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
f = 1 MHz; from cathode to external
heatsink
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
pF
11. Characteristics
Table 8.
Symbol
V
F
BYC10X-600P
Characteristics
Parameter
forward voltage
Conditions
I
F
= 10 A; T
j
= 25 °C;
Fig. 6
All information provided in this document is subject to legal disclaimers.
Min
-
Typ
2.5
Max
3.2
Unit
V
Static characteristics
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
9 May 2014
4/9
NXP Semiconductors
BYC10X-600P
Hyperfast power diode
Symbol
I
R
Parameter
reverse current
Conditions
I
F
= 10 A; T
j
= 150 °C;
Fig. 6
V
R
= 600 V; T
j
= 25 °C
V
R
= 600 V; T
j
= 150 °C
Min
-
-
-
Typ
1.3
-
-
Max
2
10
0.8
Unit
V
µA
mA
Dynamic characteristics
Q
r
recovered charge
I
F
= 10 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 25 °C;
Fig. 7
I
F
= 10 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 125 °C;
Fig. 7
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 200 A/µs;
T
j
= 25 °C;
Fig. 7
I
F
= 10 A; V
R
= 400 V; dI
F
/dt = 500 A/
µs; T
j
= 25 °C;
Fig. 7
I
F
= 10 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 25 °C;
Fig. 7
I
F
= 10 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 125 °C;
Fig. 7
I
RM
peak reverse recovery
current
I
F
= 10 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 25 °C;
Fig. 7
I
F
= 10 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 125 °C;
Fig. 7
20
I
F
(A)
15
aaa-010185
-
-
-
-
-
-
-
-
26
83
12
19
26
34
2
4.8
-
-
18
-
-
-
-
-
nC
nC
ns
ns
ns
ns
A
A
I
F
dl
F
dt
t
rr
10
(1)
(2)
(3)
time
25 %
Q
r
100 %
5
I
R
0
0
1
2
3
4
I
RM
003aac562
V
F
(V)
Fig. 7.
Reverse recovery definitions; ramp recovery
Fig. 6.
Forward current as a function of forward
voltage
BYC10X-600P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
9 May 2014
5/9
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