IMPORTANT NOTICE
10 December 2015
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Dear customer,
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which
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©
NXP Semiconductors N.V.
{year}.
All rights reserved”
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WeEn
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All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
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WeEn Semiconductors
BYC58X-600
8 A hyperfast rectifier diode
Rev. 01 — 23 February 2010
Product data sheet
1. Product profile
1.1 General description
Hyperfast epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package
specifically for use in CCM PFC applications for reduced switching losses.
1.2 Features and benefits
Allows use of smaller MOSFETs and
heatsinks
Isolated package
Low reverse recovery current
Low thermal resistance
Reduces switching losses in
associated MOSFET
Superfast switching
1.3 Applications
Continuous Current Mode (CCM)
Power Factor Correction (PFC)
Desk top computer power supplies
Flat panel TV power supplies
Power supply adapters
Server power supplies
Telecom power supplies
1.4 Quick reference data
Table 1.
V
RRM
I
F(AV)
I
FSM
Quick reference
Conditions
Min
-
square-wave pulse;
δ
= 0.5;
T
h
≤
93 °C; see
Figure 1
and
2
T
j(init)
= 25 °C; t
p
= 10 ms;
sine-wave pulse
T
j(init)
= 25 °C; t
p
= 8.3 ms;
sine-wave pulse
R
th(j-h)
thermal resistance
from junction to
heatsink
with heatsink compound;
see
Figure 3
-
-
-
-
Typ
-
-
-
-
2.5
Max
600
8
110
120
3
Unit
V
A
A
A
K/W
repetitive peak
reverse voltage
average forward
current
non-repetitive peak
forward current
Symbol Parameter
NXP Semiconductors
BYC58X-600
8 A hyperfast rectifier diode
Quick reference
…continued
Conditions
I
F
= 8 A; V
R
= 400 V;
dI
F
/dt = 200 A/µs; T
j
= 25 °C;
see
Figure 6
I
F
= 8 A; V
R
= 400 V;
dI
F
/dt = 200 A/µs; T
j
= 125 °C;
see
Figure 6
and
7
Min
-
Typ
12.5
Max
-
Unit
ns
Table 1.
Symbol Parameter
Dynamic characteristics
t
rr
reverse recovery
time
-
21
-
ns
Q
r
recovered charge
I
F
= 8 A; V
R
= 400 V;
dI
F
/dt = 200 A/µs; T
j
= 125 °C;
see
Figure 5
and
6
I
F
= 8 A; T
j
= 25 °C;
see
Figure 4
I
F
= 8 A; T
j
= 150 °C;
see
Figure 4
-
40
-
nC
Static characteristics
V
F
forward voltage
-
-
2.35
2
3.2
2.4
V
V
2. Pinning information
Table 2.
Pin
1
2
mb
K
A
n.c.
Pinning information
Symbol
Description
cathode
anode
mounting base; isolated
mb
K
A
001aaa020
Simplified outline
Graphic symbol
1
2
SOD113 (TO-220F)
3. Ordering information
Table 3.
Ordering information
Package
Name
BYC58X-600
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1 mounting
hole; 2-lead TO-220 "full pack"
Version
SOD113
Type number
BYC58X-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 23 February 2010
2 of 11
NXP Semiconductors
BYC58X-600
8 A hyperfast rectifier diode
4. Limiting values
Table 4.
Symbol
V
RRM
V
RWM
I
F(AV)
I
FRM
I
FSM
T
stg
T
j
Limiting values
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
average forward
current
repetitive peak forward
current
non-repetitive peak
forward current
storage temperature
junction temperature
square-wave pulse;
δ
= 0.5; T
h
≤
93 °C; see
Figure 1
and
2
square-wave pulse;
δ
= 0.5; t
p
= 25 µs
t
p
= 10 ms; sine-wave pulse; T
j(init)
= 25 °C
t
p
= 8.3 ms; sine-wave pulse; T
j(init)
= 25 °C
Conditions
Min
-
-
-
-
-
-
-40
-
Max
600
600
8
16
110
120
150
150
Unit
V
V
A
A
A
A
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
28
P
tot
(W)
24
0.5
20
16
0.1
12
8
4
0
0
4
8
0.2
003aae164
δ
=1
66
T
h
(max)
(°C)
78
90
102
114
126
20
P
tot
(W)
16
90
60
12
30
003aae165
a = 180°
120
8
4
138
150
12
0
0
2
4
6
I
F(AV)
(A)
8
I
F(AV)
(A)
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYC58X-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 23 February 2010
3 of 11
NXP Semiconductors
BYC58X-600
8 A hyperfast rectifier diode
5. Thermal characteristics
Table 5.
Symbol
R
th(j-h)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to heatsink
thermal resistance from
junction to ambient free air
Conditions
with heatsink compound; see
Figure 3
in free air
Min
-
-
Typ
2.5
55
Max
3
-
Unit
K/W
K/W
10
Z
th(j-h)
(K/W)
1
003aac889
10
−1
P
10
−2
t
p
t
10
−3
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 3.
Transient thermal impedance from junction to heatsink as a function of pulse width
6. Isolation characteristics
Table 6.
Symbol
V
isol(RMS)
Isolation characteristics
Parameter
RMS isolation voltage
Conditions
50 Hz
≤
f
≤
60 Hz; RH
≤
65 %; from all pins to
external heatsink; sinusoidal waveform; clean
and dust free
f = 1 MHz; from cathode to external heatsink
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
pF
BYC58X-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 23 February 2010
4 of 11
Microcontroller MCU
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