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AT302011

Description
Variable Capacitance Diode, Very High Frequency, 39pF C(T), 30V, Silicon, Abrupt,
CategoryDiscrete semiconductor    diode   
File Size119KB,3 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

AT302011 Overview

Variable Capacitance Diode, Very High Frequency, 39pF C(T), 30V, Silicon, Abrupt,

AT302011 Parametric

Parameter NameAttribute value
package instructionO-CEMW-N2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage30 V
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio4.7
Nominal diode capacitance39 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY
JESD-30 codeO-CEMW-N2
Number of terminals2
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Certification statusNot Qualified
minimum quality factor1000
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Varactor Diode ClassificationABRUPT
Base Number Matches1
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