BYC8X-600P
Hyperfast power diode
Rev.01 - 08 April 2019
Product data sheet
1. General description
Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package.
2. Features and benefits
•
•
•
•
•
•
Fast switching
Isolated plastic package
Low reverse recovery current
Low leakage current
Low thermal resistance
Reduces switching losses in associated MOSFET
3. Applications
•
•
Half-bridge/full-bridge switched-mode power supplies
Continuous Current Mode (CCM) Power Factor Correction (PFC)
4. Quick reference data
Table 1. Quick reference data
Symbol
V
R
I
F(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse
voltage
Conditions
DC
Value
600
8
16
91
100
Min
-
-
-
-
-
Typ
-
1.5
1.4
12
19
Max
3.4
1.9
-
18
-
Unit
V
A
A
A
A
Unit
V
V
V
ns
ns
Absolute maximum rating
average forward current
δ = 0.5; T
h
≤ 75 °C; square-wave pulse;
Fig. 1; Fig. 2; Fig. 3
repetitive peak forward
current
non-repetitive peak
forward current
Parameter
forward voltage
δ = 0.5; t
p
= 25 μs; T
h
≤ 75 °C;
square-wave pulse
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave pulse;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave pulse
Conditions
I
F
= 8 A; T
j
= 25 °C;
Fig. 6
I
F
= 8 A; T
j
= 125 °C;
Fig. 6
I
F
= 8 A; T
j
= 150 °C
Symbol
V
F
Static characteristics
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 200 A/μs;
T
j
= 25 °C;
Fig.
7
I
F
= 8 A; V
R
= 400 V; dI
F
/dt = 500 A/μs;
T
j
= 25 °C;
Fig.
7
WeEn Semiconductors
Hyperfast power diode
BYC8X-600P
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
mb
K
A
n.c.
cathode
anode
mounting base; isolated
Simplified outline
mb
Graphic symbol
K
A
001aaa020
1
2
SOD113 (2-lead TO-220F)
6. Ordering information
Table 3. Ordering information
Type number
Package Orderable part number Packing
Name
method
BYC8X-600P
TO220F BYC8X-600PQ
Tube
Small packing
quantity
50
Package
version
SOD113
Package
issue date
28-Aug-2015
7. Marking
Table 4. Marking codes
Type number
BYC8X-600P
Marking codes
BYC8X-600P
BYC8X-600P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
08 April 2019
2 / 10
WeEn Semiconductors
Hyperfast power diode
BYC8X-600P
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average forward current
repetitive peak forward
current
non-repetitive peak
forward current
storage temperature
junction temperature
DC
δ = 0.5; T
h
≤ 75 °C; square-wave pulse;
Fig. 1; Fig. 2; Fig. 3
δ = 0.5; t
p
= 25 μs; T
h
≤ 75 °C;
square-wave pulse
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave pulse;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave pulse
T
stg
T
j
Conditions
Value
600
600
600
8
16
91
100
-65 to 175
175
Unit
V
V
V
A
A
A
A
°C
°C
I
F(AV)
= I
F(RMS)
× √δ
V
o
= 1.581 V; R
s
= 0.043 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
a = form factor = I
F(RMS)
/ I
F(AV)
V
o
= 1.581 V; R
s
= 0.043 Ω
Fig. 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYC8X-600P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
08 April 2019
3 / 10
WeEn Semiconductors
Hyperfast power diode
BYC8X-600P
Fig. 3. Average forward current as a function of
heatsink temperature; maximum values
Fig. 4. Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;
maximum values
BYC8X-600P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
08 April 2019
4 / 10
WeEn Semiconductors
Hyperfast power diode
BYC8X-600P
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
R
th(j-h)
Parameter
thermal resistance
from junction to
heatsink
thermal resistance
from junction to
ambient free air
Conditions
without heatsink compound
with heatsink compound;
Fig. 5
in free air
Min
-
-
-
Typ
-
-
60
Max
7.2
5.5
-
Unit
K/W
K/W
K/W
R
th(j-a)
Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse width
10. Isolation characteristics
Table 7. Isolation characteristics
Symbol
V
isol(RMS)
Parameter
RMS isolation voltage
Conditions
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from
all pins to external heatsink; sinusoidal
waveform; clean and dust free
from cathode to external heatsink
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
pF
BYC8X-600P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
08 April 2019
5 / 10
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