VQ1004P-1 datasheet, PDF - EEWORLD Datasheet

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VQ1004P-1: DescriptionPower Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size50KB，2 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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VQ1004P-1 Overview

Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

VQ1004P-1 Parametric

Parameter Name	Attribute value
package instruction	IN-LINE, R-PDIP-T14
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.46 A
Maximum drain-source on-resistance	3.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	10 pF
JESD-30 code	R-PDIP-T14
Number of components	4
Number of terminals	14
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	2 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Transistor component materials	SILICON
Maximum off time (toff)	10 ns
Maximum opening time (tons)	10 ns
Base Number Matches	1

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VQ1004P-1 Related Products

	VQ1004P-1	VQ1006J-1	VQ1004J-2	VQ1004J-1	VQ1006P-1	VQ1006J-2
Description	Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 0.4A I(D), 90V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 0.4A I(D), 90V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 0.4A I(D), 90V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
package instruction	IN-LINE, R-PDIP-T14	IN-LINE, R-PDIP-T14	IN-LINE, R-PDIP-T14	IN-LINE, R-PDIP-T14	IN-LINE, R-PDIP-T14	IN-LINE, R-PDIP-T14
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	90 V	60 V	60 V	90 V	90 V
Maximum drain current (ID)	0.46 A	0.4 A	0.46 A	0.46 A	0.4 A	0.4 A
Maximum drain-source on-resistance	3.5 Ω	3.5 Ω	3.5 Ω	3.5 Ω	3.5 Ω	3.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	10 pF	10 pF	10 pF	10 pF	10 pF	10 pF
JESD-30 code	R-PDIP-T14	R-PDIP-T14	R-PDIP-T14	R-PDIP-T14	R-PDIP-T14	R-PDIP-T14
Number of components	4	4	4	4	4	4
Number of terminals	14	14	14	14	14	14
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	2 A	2 A	2 A	2 A	2 A	2 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maximum off time (toff)	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns
Maximum opening time (tons)	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns
Maker	-	Vishay	Vishay	Vishay	Vishay	Vishay

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