Automotive Series Serial EEPROMs
125℃ SPI BUS ICs
BR25□□□□Family
BR25H□□□-WC series
●Description
BR25H□□□-WC series is a serial EEPROM of SPI BUS interface method.
No.10001EDT01
●Features
1) High speed clock action up to 5MHz (Max.)
2) Wait function by HOLDB terminal.
3) Part or whole of memory arrays settable as read only memory area by program.
4) 2.5½5.5V single power source action most suitable for battery use.
5) Page write mode useful for initial value write at factory shipment.
6) Highly reliable connection by Au pad and Au wire.
7) For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1)
8) Auto erase and auto end function at data rewrite.
9) Low current consumption
At write action (5V)
: 1.5mA (Typ.)
At read action (5V)
: 1.0mA (Typ.)
At standby action (5V) : 0.1μA (Typ.)
10) Address auto increment function at read action
11) Write mistake prevention function
Write prohibition at power on.
Write prohibition by command code (WRDI).
Write prohibition by WPB pin.
Write prohibition block setting by status registers (BP1, BP0)
Write mistake prevention function at low voltage.
12) SOP8, SOP-J8, TSSOP-B8 Package
13) Data at shipment Memory array: FFh, status register WPEN, BP1, BP0 : 0
14) Data kept for 40 years.
15) Data rewrite up to 1,000,000times.
●Page
write
Number of pages
Product number
16 Byte
BR25H010-WC
BR25H020-WC
BR25H040-WC
32 Byte
BR25H080-WC
BR25H160-WC
BR25H320-WC
●BR25H
series
Capacity
1Kbit
2Kbit
4Kbit
8Kbit
16Kbit
32Kbit
Bit format
128×8
256×8
512×8
1K×8
2K×8
4Kx8
Type
BR25H010-WC
BR25H020-WC
BR25H040-WC
BR25H080-WC
BR25H160-WC
BR25H320-WC
Power source voltage
2.5~5.5V
2.5~5.5V
2.5~5.5V
2.5~5.5V
2.5~5.5V
2.5~5.5V
SOP8
●
●
●
●
●
●
SOP-J8
●
●
●
●
●
●
TSSOP-B8
●
●
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© 2010 ROHM Co., Ltd. All rights reserved.
1/19
2010.08 - Rev.D
BR25H□□□-WC series
●Absolute
maximum ratings (Ta=25°C)
Parameter
Impressed voltage
Permissible
dissipation
Storage temperature range
Operating temperature range
Terminal voltage
Technical Note
Symbol
VCC
Pd
Tstg
Topr
-
Limits
-0.3~+6.5
560(SOP8)
*1
Unit
V
mW
*3
560(SOP-J8)
*2
410(TSSOP-B8)
-65~+150
-40~+125
-0.3~VCC+0.3
°C
°C
V
・When
using at Ta=25℃ or higher, 4.5mW (*1,*2), 3.3mW(*3) to be reduced per 1℃
●Memory
cell characteristics (VCC=2.5V½5.5V)
Parameter
Limits
Min.
1,000,000
*1
Typ.
-
-
-
-
-
Max.
-
-
-
-
-
Unit
Times
Times
Times
Years
Years
Condition
Ta
≤
85°C
Ta
≤
105°C
Ta
≤
125°C
Ta
≤
25°C
Ta
≤
85°C
Number of data rewrite times
500,000
300,000
40
20
Data hold years
*1
*1:Not 100% TESTED
●Recommended
action conditions
Parameter
Power source voltage
Input voltage
Symbol
VCC
Vin
Limits
2.5
~
5.5
0~VCC
Unit
V
●Input
/ output capacity (Ta=25°C, frequency=5MHz)
Parameter
Input capacity
*1
Output capacity
*1
*1: Not 100% TESTED
Symbol
C
IN
C
OUT
Conditions
V
IN
=GND
V
OUT
=GND
Min
-
-
Max
8
Unit
pF
8
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© 2010 ROHM Co., Ltd. All rights reserved.
2/19
2010.08 - Rev.D
BR25H□□□-WC series
●Electrical
characteristics (Unless otherwise specified, Ta=-40~+125°C, VCC=2.5~5.5V)
Limits
Parameter
Symbol
Unit Conditions
Min.
Typ.
Max.
“H” input voltage
“L” input voltage
“L” output voltage
“H” output voltage
Input leak current
Output leak current
VIH
VIL
VOL
VOH
ILI
ILO
ICC1
Current consumption
at write action
ICC2
-
-
3.0
mA
0.7xVCC
-0.3
0
VCC-0.5
-10
-10
-
-
-
-
-
-
-
-
VCC
+0.3
0.3x
VCC
0.4
VCC
10
10
2.0
V
2.5≦VCC≦5.5V
V
2.5≦VCC≦5.5V
V
IOL=2.1mA
V
IOH=-0.4mA
μA
V
IN
=0~VCC
μA
V
OUT
=0~VCC, CSB=VCC
mA
VCC=2.5V,fSCK=5MHz, tE/W=5ms
VIH/VIL=0.9VCC/0.1VCC, SO=OPEN
Byte write, Page write Write status register
VCC=5.5V,fSCK=5MHz, tE/W=5ms
VIH/VIL=0.9VCC/0.1VCC, SO=OPEN
Byte write, Page write Write status register
VCC=2.5V,fSCK=5MHz
VIH/VIL=0.9VCC/0.1VCC, SO=OPEN
Read, Read status register
VCC=5.5V,fSCK=5MHz
VIH/VIL=0.9VCC/0.1VCC, SO=OPEN
Read, Read status register
Technical Note
ICC3
Current consumption
at read action
ICC4
Standby current
ISB
-
-
1.5
mA
-
-
-
-
2.0
10
mA
μA
VCC=5.5V
CSB=HOLDB=WPB=VCC, SCK=SI=VCC or =GND, SO=OPEN
*Radiation resistance design is not made
●Block
diagram
CSB
SCK
VOLTAGE
INSTRUCTION DECODE
CONTROL CLOCK
GENERATION
WRITE
INHIBITION
HIGH VOLTAGE
GENERATOR
DETECTION
SI
HOLDB
INSTRUCTION
REGISTER
ADDRESS
REGISTER
7½12bit *1
STATUS REGISTER
ADDRESS
DECODER
READ/WRITE
AMP
7½12bit *1
1½32K
EEPROM
*1 7bit: BR25H010-WC
8bit: BR25H020-WC
9bit: BR25H040-WC
10bit: BR25H080-WC
11bit: BR25H160-WC
12bit: BR25H320-WC
WPB
SO
DATA
REGISTER
8bit
8bit
Fig.1 Block diagram
●Pin
assignment and description
Terminal name
Vcc
HOLDB SCK
SI
Input/Output
-
-
Input
Input
Input
Output
Input
Function
Power source to be connected
All input / output reference voltage, 0V
Chip select input
Serial clock input
Start bit, ope code, address, and serial data input
Serial data output
Hold input
Command communications may be suspended
temporarily (HOLD status)
Write protect input
Write command is prohibited
*1
Write status register command is prohibited.
VCC
GND
CSB
SCK
SI
SO
HOLDB
BR25H010-WC
BR25H020-WC
BR25H040-WC
BR25H080-WC
BR25H160-WC
BR25H320-WC
CSB
SO
WPB
GND
Fig.2 Pin assignment diagram
WPB
*1:BR25H010/020/040-WC
Input
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© 2010 ROHM Co., Ltd. All rights reserved.
3/19
2010.08 - Rev.D
BR25H□□□-WC series
●Operating
timing characteristics
(Ta=-40~+125°C, unless otherwise specified, load capacity CL1=100pF)
2.5≤VCC≤5.5V
Parameter
Symbol
Unit
Min. Typ. Max.
SCK frequency
SCK high time
SCK low time
CSB high time
CSB setup time
CSB hold time
SCK setup time
SCK hold time
SI setup time
SI hold time
Data output delay time1
Data output delay time2
(C
L2
=30pF)
Technical Note
●Sync
data input / output timing
tCS
tCSS
CSB
tSCKS
tSCKWL
tSCKWH
tRC
tFC
SCK
tDIS tDIH
f
SCK
t
SCKWH
t
SCKWL
t
CS
t
CSS
t
CSH
t
SCKS
t
SCKH
t
DIS
t
DIH
t
PD1
t
PD2
t
OH
t
OZ
t
HFS
t
HFH
t
HRS
t
HRH
t
HOZ
t
HPD
t
RC
t
FC
t
RO
t
FO
t
E/W
*1
-
85
85
85
90
85
90
90
20
30
-
-
0
-
0
40
0
70
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5
-
-
-
-
-
-
-
-
-
70
55
-
100
-
-
-
-
100
70
1
1
50
50
5
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SI
SO
High-Z
Fig.3 Input timing
SI is taken into IC inside in sync with data rise
edge of SCK. Input address and data from the
most significant bit MSB.
tCS
tCSH tSCKH
CSB
SCK
SI
SO
tPD
tOH
tRO,tFO
tOZ
High-Z
Output hold time
Output disable time
HOLDB setting
setup time
HOLDB setting
hold time
HOLDB release
setup time
HOLDB release
hold time
Time from HOLDB
to output High-Z
Time from HOLDB
To output change
SCK rise time
*1
SCK fall time
*1
Fig.4
Input / Output timing
SO is output in sync with data fall edge of SCK.
Data is output from the most significant bit MSB.
CSB
"H"
"L"
tHFS
tHFH
tHRS tHRH
SCK
tDIS
SI
n+1
tHOZ
High-Z
tHPD
n
n-1
SO
Dn+1
Dn
Dn
Dn-1
ns
μs
μs
ns
ns
ms
HOLDB
Fig.5
HOLD timing
OUTPUT rise time
*1
OUTPUT fall time
Write time
*1 NOT 100% TESTED
●AC
measurement conditions
Parameter
Load capacity 1
Load capacity 2
Input rise time
Input fall time
Input voltage
Input / Output judgment voltage
Symbol
C
L1
C
L2
-
-
-
-
Limits
Min.
-
-
-
-
Typ.
-
-
-
-
0.2VCC/0.8VCC
0.3VCC/0.7VCC
Max.
100
30
50
50
Unit
pF
pF
ns
ns
V
V
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© 2010 ROHM Co., Ltd. All rights reserved.
4/19
2010.08 - Rev.D
BR25H□□□-WC series
●Characteristic
data (The following characteristic data are Typ. Value.)
6
5
4
VIH[V]
3
2
1
0
0
1
2
3
Vcc[V]
4
5
6
6
Technical Note
1
Ta=-40℃
Ta=25℃
Ta=125℃
VIL[V]
5
4
Ta=-40℃
Ta=25℃
Ta=125℃
VOL[V]
0.8
0.6
Ta=-40℃
Ta=25℃
Ta=125℃
SPEC
3
2
1
0
0
1
2
3
Vcc[V]
4
5
6
SPEC
0.4
0.2
SPEC
0
0
1
2
3
IOL[mA]
4
5
6
Fig.6
2.6
2.5
2.4
2.3
VOH[V]
2.2
2.1
2
1.9
1.8
0
"H" input voltage
VIH(CSB,SCK,SI,HOLDB,WPB)
12
Fig.7
"L"
input voltage VIL(CSB,SCK,SI,HOLDB,WPB)
12
Fig.8 "L" output voltage VOL-IOL(Vcc=2.5V)
SPEC
10
8
ILI[μA]
6
4
2
0
10
SPEC
Ta=-40℃
Ta=25℃
Ta=125℃
ILO[μA]
2
3
Vcc[V]
4
5
6
Ta=-40℃
Ta=25℃
Ta=125℃
8
6
4
2
0
SPEC
Ta=-40℃
Ta=25℃
Ta=125℃
0.4
IOH[mA]
0.8
1.2
0
1
0
1
2
3
VOUT[V]
4
5
6
Fig.9 "H" output voltage VOH-IOH(Vcc=2.5V)
4
Fig.10 Input leak current ILI(CSB,SCK,SI,HOLDB,WPB)
2.5
12
Fig.11 Output leak current ILO(SO)(Vcc=5.5V)
ICC3,4(READ)[mA]
3
ICC1,2[mA]]
fSCK=5MHz
DATA=00h
SPEC
SPEC
2
1.5
1
0.5
fSCK=5MHz
DATA=AAh
SPEC
SPEC
10
8
ISB[μA]
6
4
2
0
SPEC
Ta=-40℃
Ta=25℃
Ta=125℃
2
1
Ta=-40℃
Ta=25℃
Ta=125℃
Ta=-40℃
Ta=25℃
Ta=125℃
0
0
1
2
3
Vcc[V]
4
5
6
0
0
1
2
3
Vcc[V]
4
5
6
0
1
2
3
Vcc[V]
4
5
6
Fig.12 Current consumption at WRITE operation
ICC1,2
100
Fig.13 Consumption Current at READ operation
ICC3,4
100
80
tSCKWH [ns]
100
Fig.14 Consumption current at standby operation ISB
SPEC
tSCKWL [ns]
80
SPEC
Ta=-40℃
Ta=25℃
Ta=125℃
10
fSCK[MHz]
60
40
20
0
SPEC
1
Ta=-40℃
Ta=25℃
Ta=125℃
60
Ta=-40℃
Ta=25℃
Ta=125℃
40
20
0.1
0
1
2
3
Vcc[V]
4
5
6
0
0
1
2
3
Vcc[V]
4
5
6
0
1
2
3
Vcc[V]
4
5
6
Fig.15 SCK frequency fSCK
100
100
Fig.16 SCK high time tSCKWH
100
Fig.17 SCK low time tSCKWL
80
SPEC
tCSS[ns]
80
SPEC
tCSH[ns]
80
tCS[ns]
60
Ta=-40℃
Ta=25℃
Ta=125℃
60
Ta=-40℃
Ta=25℃
Ta=125℃
SPEC
Ta=-40℃
Ta=25℃
Ta=125℃
60
40
40
40
20
20
20
0
0
1
2
3
Vcc[V]
4
5
6
0
0
1
2
3
Vcc[V]
4
5
6
0
0
1
2
3
Vcc[V]
4
5
6
Fig.18 CSB high time tCS
Fig.19 CSB setup time tCSS
Fig.20 CSB hold time tCSH
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© 2010 ROHM Co., Ltd. All rights reserved.
5/19
2010.08 - Rev.D
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