INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
BDX85/A/B/C
DESCRIPTION
·High
DC Current Gain-
: h
FE
= 750(Min)@ I
C
= 3A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 45V(Min)- BDX85; 60V(Min)- BDX85A
80V(Min)- BDX85B; 100V(Min)- BDX85C
·Complement
to Type BDX86/A/B/C
APPLICATIONS
·Designed
for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDX85
VALUE
45
UNIT
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
w
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i
em
cs
.is
w
w
BDX85A
BDX85B
60
80
V
BDX85C
100
45
BDX85
BDX85A
BDX85B
60
80
V
BDX85C
100
5
10
15
100
100
200
-65~200
V
A
A
mA
W
℃
℃
V
EBO
I
C
I
CM
I
B
B
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.75
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDX85
BDX85A
I
C
= 100mA; I
B
= 0
BDX85B
BDX85C
V
CE(
sat
)-1
V
CE(
sat
)-2
V
BE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= 4A; I
B
= 16mA
B
BDX85/A/B/C
CONDITIONS
MIN
45
60
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
V
80
100
2.0
4.0
V
V
V
V
I
C
= 8A; I
B
= 40mA
B
I
C
= 8A; I
B
= 80mA
B
I
CBO
Collector
Cutoff Current
w
em
cs
.is
w
w
I
C
= 4A; V
CE
= 3V
BDX85
V
CB
= 45V; I
E
= 0
V
CB
= 45V; I
E
= 0; T
C
= 150℃
V
CB
= 60V; I
E
= 0
V
CB
= 60V; I
E
= 0; T
C
= 150℃
V
CB
= 80V; I
E
= 0
V
CB
= 80V; I
E
= 0; T
C
= 150℃
BDX85A
BDX85B
BDX85C
V
CB
= 100V; I
E
= 0
V
CB
= 100V; I
E
= 0; T
C
= 150℃
B
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i
4.0
2.8
0.5
5.0
0.5
5.0
0.5
5.0
0.5
5.0
mA
BDX85
BDX85A
BDX85B
BDX85C
V
CE
= 22V; I
B
= 0
V
CE
= 30V; I
B
= 0
B
I
CEO
Collector
Cutoff Current
1.0
V
CE
= 40V; I
B
= 0
B
mA
V
CE
= 50V; I
B
= 0
B
I
EBO
h
FE-1
h
FE-2
h
FE-3
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
V
EB
= 5V; I
C
= 0
I
C
= 3A; V
CE
= 3V
I
C
= 4A; V
CE
= 3V
I
C
= 8A; V
CE
= 4V
1000
750
200
2.0
mA
18000
isc Website：www.iscsemi.cn
2
Embedded System
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