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BZT52C75SR9G

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size242KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BZT52C75SR9G Overview

Zener Diode,

BZT52C75SR9G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
ECCN codeEAR99
Diode typeZENER DIODE
JESD-609 codee3
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Terminal surfaceMatte Tin (Sn)
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
BZT52C2V4S thru BZT52C75S
Taiwan Semiconductor
Small Signal Product
5% Tolerance SMD Zener Diode
FEATURES
- Wide zener voltage range selection : 2.4V to 75V
- Surface Mount Device Type
- VZ Tolerance Selection of ±5%
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Moisture sensitivity level 1
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
SOD-323F
MECHANICAL DATA
- Case: Flat lead SOD-323F small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight : 4.02 ± 0.5mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Forward Voltage
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction and Storage Temperature Range
(Note 1)
@ I
F
= 10mA
SYMBOL
V
F
P
D
R
θJA
T
J
, T
STG
VALUE
1
200
625
-65 to +150
UNIT
V
mW
o
C/W
o
C
Note 1: Valid provided that electrodes are kept at ambient temperature.
Zener I vs. V Characteristics
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
I
ZM
V
ZM
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
ZT
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
Document Number: DS_S1408005
Version: E14
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