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STB16NM50N

Description
N-channel 500 V - 0.21 ヘ - 15 A MDmesh⑩ II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP
CategoryDiscrete semiconductor    The transistor   
File Size550KB,18 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

STB16NM50N Overview

N-channel 500 V - 0.21 ヘ - 15 A MDmesh⑩ II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP

STB16NM50N Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeD2PAK
package instructionROHS COMPLIANT, TO-263, D2PAK-3
Contacts4
Reach Compliance Code_compli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)470 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)15 A
Maximum drain current (ID)15 A
Maximum drain-source on-resistance0.26 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)60 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
STB16NM50N - STF/I16NM50N
STP16NM50N - STW16NM50N
N-channel 500 V - 0.21
- 15 A MDmesh™ II Power MOSFET
D
2
PAK - I
2
PAK - TO-220 - TO-247- TO-220FP
Features
Type
STB16NM50N
STI16NM50N
STF16NM50N
STP16NM50N
STW16NM50N
V
DSS
(@Tjmax)
550 V
550 V
550 V
550 V
550 V
R
DS(on)
max
0.26
0.26
0.26
0.26
0.26
I
D
1
3
3
12
15 A
15 A
15 A
(1)
D²PAK
2
1
3
I²PAK
15 A
15 A
3
1
2
TO-247
1. Limited only by maximum temperature allowed
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
TO-220
Figure 1.
Application
Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
b
O
Table 1.
so
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
Internal schematic diagram
P
e
od
r
s)
t(
uc
3
1
2
TO-220FP
Device summary
Marking
B16NM50N
I16NM50N
F16NM50N
P16NM50N
W16NM50N
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
Tube
Order codes
STB16NM50N
STI16NM50N
STF16NM50N
STP16NM50N
STW16NM50N
March 2008
Rev 2
1/18
www.st.com
18

STB16NM50N Related Products

STB16NM50N STI16NM50N
Description N-channel 500 V - 0.21 ヘ - 15 A MDmesh⑩ II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP N-channel 500 V - 0.21 ヘ - 15 A MDmesh⑩ II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP
Is it Rohs certified? conform to conform to
Maker STMicroelectronics STMicroelectronics
Parts packaging code D2PAK TO-262AA
package instruction ROHS COMPLIANT, TO-263, D2PAK-3 ROHS COMPLIANT, TO-262, I2PAK-3
Contacts 4 3
Reach Compliance Code _compli _compli
Avalanche Energy Efficiency Rating (Eas) 470 mJ 470 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V 500 V
Maximum drain current (Abs) (ID) 15 A 15 A
Maximum drain current (ID) 15 A 15 A
Maximum drain-source on-resistance 0.26 Ω 0.26 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-262AA
JESD-30 code R-PSSO-G2 R-PSIP-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) 245 245
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 125 W 125 W
Maximum pulsed drain current (IDM) 60 A 60 A
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal surface Matte Tin (Sn) MATTE TIN
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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