UZTX657 datasheet, PDF - EEWORLD Datasheet

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UZTX657: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size72KB，2 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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UZTX657 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92 COMPATIBLE, E-LINE PACKAGE-3

UZTX657 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-W3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
Base Number Matches	1

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NPN SILICON PLANAR MEDIUM POWER

HIGH VOLTAGE TRANSISTORS

ISSUE 2 JULY 94

FEATURES

* 300 Volt V

CEO

* 0.5 Amp continuous current

* P

tot

=1 Watt

ZTX656

ZTX657

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature

Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

ZTX656

200

5

1

0.5

1

E-Line

TO92 Compatible

ZTX657

300

UNIT

V

A

W

°C

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

Static Forward

Current Transfer

Ratio

Transition

Frequency

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

f

T

50

40

30

ZTX656

MIN.

200

5

100

0.5

1

50

40

30

MHz

300

5

100

0.5

1

ZTX657

MAX.

MAX. MIN.

UNIT

V

nA

V

CONDITIONS.

I

C

=100

µ

A, I

E

=0

I

C

=10mA, I

B

=0*

I

E

=100

µ

A, I

C

=0

V

CB

=160V, I

E

=0

V

CB

=200V, I

E

=0

V

EB

=3V, I

C

=0

I

C

=100mA, I

B

=10mA*

I

C

=100mA, I

B

=10mA*

IC=100mA, V

CE

=5V*

I

C

=100mA, V

CE

=5V

I

C

=10mA, V

CE

=5V

I

C

=10mA, V

CE

=20V

f=20MHz

3-227

UZTX657 Related Products

	UZTX657
Description	Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified?	conform to
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-W3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
Base Number Matches	1

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