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GBL02

Description
4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size206KB,4 Pages
ManufacturerTAITRON Components
Websitehttp://www.taitroncomponents.com/
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GBL02 Overview

4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

4A Glass Passivated
Bridge Rectifier
GBL005 – GBL10
4A Glass Passivated Bridge Rectifier
Features
Glass passivated chip junction
High case dielectric strength
High surge current capability
GBL
Ideal for printed circuit boards
High temperature soldering guaranteed: 260˚C/10 seconds
0.375” (9.5mm) lead length at 5lbs.(2.3kg) tension
This series is UL recognized under component index, File number E194718
RoHS compliant
Mechanical Data
Case:
Epoxy:
Terminals:
Polarity:
Weight:
GBL molded plastic body
Plastic package has UL flammability classification 94V-0
Plated leads solderable per MIL-STD-750, Method 2026
As marked on case
0.071 ounce, 2.0 gram
Maximum Ratings And Electrical Characteristics
(T
amb
=25˚C)
Symbols
Parameter
Maximum Repetitive Peak
Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking
Voltage
Maximum Average
Forward Rectified Current
GBL005
50
35
50
GBL01
100
70
100
GBL02
200
140
200
GBL04
400
280
400
4.0
GBL06
600
420
600
GBL08
800
560
800
GBL10
1000
700
1000
Unit
V
V
V
A
T
C
=50° C
Note 1
8.3ms Single
Sine-wave
Superimposed
on Rated
Load (JEDEC
Method)
Conditions
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
Peak Forward Surge
Current
150
A
t
Rating for Fusing (t<8.3ms)
93
A²S
TAITRON COMPONENTS INCORPORATED
www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Rev. A/AH 2008-05-23
Page 1 of 4

GBL02 Related Products

GBL02 GBL04 GBL01 GBL005 GBL10 GBL08 GBL06
Description 4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

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