PD-96931C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHNJ67134 100K Rads (Si)
IRHNJ63134 300K Rads (Si)
R
DS(on)
0.088Ω
0.088Ω
I
D
19A
19A
IRHNJ67134
JANSR2N7589U3
150V, N-CHANNEL
REF: MIL-PRF-19500/746
TECHNOLOGY
QPL Part Number
JANSR2N7589U3
JANSF2N7589U3
SMD-0.5
International Rectifier’s R6
TM
technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm
2
). Their combination of
very low
RDS(on)
and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
n
ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
19
12
76
75
0.6
±20
60
19
7.5
8.6
-55 to 150
300 (for 5s)
1.0 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
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1
08/20/13
IRHNJ67134, JANSR2N7589U3
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆V
GS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
150
—
—
2.0
—
13
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.18
—
—
-9.42
—
—
—
—
—
—
—
—
—
—
—
—
4.0
1570
240
5.2
1.08
—
—
0.088
4.0
—
—
10
25
100
-100
50
15
20
25
30
60
30
—
—
—
—
V
V/°C
Ω
V
mV/°C
S
µA
nA
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 12A
Ã
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 12A
Ã
VDS= 120V ,VGS=0V
VDS = 120V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 19A
VDS = 75V
VDD = 75V, ID = 19A,
VGS = 12V, RG = 7.5Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Ciss
Coss
C rss
Rg
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
nC
ns
nH
pF
Ω
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
19
76
1.2
350
2.5
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = 19A, VGS = 0V
Ã
Tj = 25°C, IF = 19A, di/dt
≤
100A/µs
VDD
≤
25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
1.67
Units
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNJ67134, JANSR2N7589U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source On-State
Resistance (SMD-0.5)
Diode Forward Voltage
Up to 300K Rads (Si)
1
Min
150
2.0
—
—
—
—
—
—
Max
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 120V, V
GS
= 0V
V
GS
= 12V, I
D
= 12A
V
GS
= 12V, I
D
= 12A
V
GS
= 0V, I
D
= 19A
—
4.0
100
-100
10
0.092
0.088
1.2
1. Part numbers IRHNJ67134 (JANSR2N7589U3) and IRHNJ63134 (JANSF2N7589U3)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm ))
39 ± 5%
61 ± 5%
90 ± 5%
2
Energy
(MeV)
410 ± 5%
825 ± 5%
1470 ± 5%
Range
(µm)
50 ± 5%
66 ± 7.5%
80 ± 5%
@VGS=
@VGS=
VDS (V)
@VGS=
@VGS=
@VGS=
0V
150
150
50
-5V
150
150
50
-10V
150
150
30
-15V
150
40
-
-20V
150
-
-
175
150
125
100
75
50
25
0
0
-5
-10
Bias VGS (V)
-15
-20
Bias VDS (V)
LET=39 ± 5%
LET=61 ± 5%
LET=90 ± 5%
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHNJ67134, JANSR2N7589U3
Pre-Irradiation
1000
1000
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
10
10
5.0V
1
5.0V
60µs PULSE WIDTH
Tj = 25°C
1
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 19A
2.5
ID, Drain-to-Source Current (A)
T J = 150°C
2.0
T J = 25°C
10
1.5
1.0
VDS = 50V
60µs PULSE WIDTH
15
1.0
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
0.5
VGS = 12V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHNJ67134, JANSR2N7589U3
360
320
280
240
200
160
120
80
40
0
4
8
12
16
ID = 19A
RDS(on), Drain-to -Source On Resistance (m
Ω)
RDS(on), Drain-to -Source On Resistance (m
Ω)
400
400
360
320
280
240
200
160
120
80
40
0
0
20
40
60
80
ID, Drain Current (A)
VGS = 12V
T J = 25°C
T J = 150°C
T J = 150°C
T J = 25°C
20
24
VGS, Gate -to -Source Voltage (V)
Fig 5.
Typical On-Resistance Vs
Gate Voltage
Fig 6.
Typical On-Resistance Vs
Drain Current
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
210
6.0
200
VGS(th) Gate threshold Voltage (V)
ID = 1.0mA
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
190
180
170
160
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
-60 -40 -20
0
20
40
60
80 100 120 140 160
150
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
T J , Temperature ( °C )
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8.
Typical Threshold Voltage Vs
Temperature
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