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IRF9230EBPBF

Description
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
CategoryDiscrete semiconductor    The transistor   
File Size882KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance  
Download Datasheet Parametric View All

IRF9230EBPBF Overview

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

IRF9230EBPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)66 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)6.5 A
Maximum drain-source on-resistance0.92 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power consumption environment75 W
Maximum pulsed drain current (IDM)28 A
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)180 ns
Maximum opening time (tons)150 ns
Base Number Matches1
PD- 90548E
IRF9230
JANTX2N6806
JANTXV2N6806
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
®
TRANSISTORS
THRU-HOLE (TO-204AA)
Product Summary
Part Number
IRF9230
200V, P-CHANNEL
REF: MIL-PRF-19500/562
BV
DSS
-200V
R
DS(on)
0.80
I
D
-6.5A
TO-3 (TO-204AA)
Description
HEXFET
®
MOSFET technology is the key to IR Hirel advanced
line of power MOSFET transistors. The efficient geometry and
unique processing of this latest “State of the Art” design
achieves: very low on-state resistance combined with high trans
conductance; superior reverse energy and diode recovery dv/dt
capability.
The HEXFET transistors also feature all of the well established
advantages of MOSFETs such as voltage control, very fast
switching and temperature stability of the electrical parameters.
They are well suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers
and high energy pulse circuits.
Features
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
Parameter
Value
-6.5
-4.0
-26
75
0.60
± 20
181
-6.5
7.5
-5.0
-55 to + 150
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (Typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
I
D1
@ V
GS
= -10V, T
C
= 25°C Continuous Drain Current
I
D2
@ V
GS
= -10V, T
C
= 100°C Continuous Drain Current
I
DM
@T
C
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the page 2.
1
International Rectifier HiRel Products, Inc.
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