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IRHN8250PBF

Description
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size297KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance  
Download Datasheet Parametric Compare View All

IRHN8250PBF Overview

Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN

IRHN8250PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionCHIP CARRIER, R-CBCC-N3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresRADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)26 A
Maximum drain-source on-resistance0.11 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-CBCC-N3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power consumption environment100 W
Maximum pulsed drain current (IDM)104 A
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)280 ns
Maximum opening time (tons)173 ns
Base Number Matches1
PD - 90679G
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-1)
Product Summary
Part Number
IRHN7250
IRHN3250
IRHN4250
IRHN8250
Radiation Level
100K Rads (Si)
300K Rads (Si)
500K Rads (Si)
1000K Rads (Si)
R
DS(on)
0.1Ω
0.1Ω
0.1Ω
0.1Ω
I
D
26A
26A
26A
26A
IRHN7250
JANSR2N7269U
200V, N-CHANNEL
REF:MIL-PRF-19500/603
RAD-Hard HEXFET
TECHNOLOGY
®
QPL Part Number
JANSR2N7269U
JANSF2N7269U
JANSG2N7269U
JANSH2N7269U
SMD-1
International Rectifier’s RAD-Hard
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rds(on)
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TM
HEXFET
®
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
À
PD @ T C = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
26
16
104
150
1.2
±20
500
26
15
5.0
-55 to150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5 sec)
2.6 (Typical)
g
www.irf.com
1
05/15/06

IRHN8250PBF Related Products

IRHN8250PBF IRHN4250PBF IRHN3250PBF
Description Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
package instruction CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3
Contacts 3 3 3
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 500 mJ 500 mJ 500 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 200 V 200 V
Maximum drain current (ID) 26 A 26 A 26 A
Maximum drain-source on-resistance 0.11 Ω 0.11 Ω 0.11 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-CBCC-N3 R-CBCC-N3 R-CBCC-N3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 104 A 104 A 104 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 40 40 40
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 -
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