Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BST39; BST40
NPN high-voltage transistors
Product data sheet
Supersedes data of 2000 Jul 03
2004 Dec 14
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
FEATURES
•
Low current (max. 100 mA)
•
High voltage (max. 350 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
NPN high-voltage transistor in a SOT89 plastic package.
PNP complements: BST15 and BST16.
MARKING
TYPE NUMBER
BST39
BST40
MARKING CODE
AT1
AT2
3
2
1
BST39; BST40
PINNING
PIN
1
2
3
emitter
collector
base
DESCRIPTION
2
3
1
sym042
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BST39
BST40
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
VERSION
SOT89
2004 Dec 14
2
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BST39
BST40
V
CEO
collector-emitter voltage
BST39
BST40
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
BST39; BST40
MIN.
MAX.
400
300
350
250
5
100
200
100
1.3
+150
150
+150
V
V
V
V
V
UNIT
mA
mA
mA
W
°C
°C
°C
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
R
th(j-s)
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector capacitance
transition frequency
CONDITIONS
I
E
= 0 A; V
CB
= 300 V
I
C
= 0 A; V
EB
= 5 V
I
C
= 20 mA; V
CE
= 10 V
I
E
= i
e
= 0 A; V
CB
= 10 V; f = 1 MHz
−
−
40
−
−
MIN.
MAX.
20
100
−
500
2
−
mV
pF
MHz
UNIT
nA
nA
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
96
16
UNIT
K/W
K/W
collector-emitter saturation voltage I
C
= 50 mA; I
B
= 4 mA
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz 70
2004 Dec 14
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
BST39; BST40
SOT89
D
B
A
b
p3
E
H
E
L
p
1
2
b
p2
w
M
b
p1
e
1
e
3
c
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.6
1.4
bp1
0.48
0.35
bp2
0.53
0.40
bp3
1.8
1.4
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
e
3.0
e1
1.5
HE
4.25
3.75
Lp
1.2
0.8
w
0.13
OUTLINE
VERSION
SOT89
REFERENCES
IEC
JEDEC
TO-243
JEITA
SC-62
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
2004 Dec 14
4
京公网安备 11010802033920号
EEWORLD
