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ES2BA

Description
2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size139KB,2 Pages
ManufacturerGood-Ark
Websitehttp://www.goodark.com/
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ES2BA Overview

2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC

ES2BA Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionGREEN, PLASTIC, SMA, 2 PIN
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingPURE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationEFFICIENCY
Phase1
Maximum reverse recovery time0.0350 us
Maximum repetitive peak reverse voltage100 V
Maximum average forward current2 A
Maximum non-repetitive peak forward current50 A
ES2AA thru ES2MA
Super Fast Surface Mount Rectifiers
Reverse Voltage 50 to 1000 Volts Forward Current 2.0 Amperes
Features
Glass passivated chip
Super fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification 94V-0
Mechanical Data
Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.002 ounce, 0.064 gram
Maximum Ratings and Electrical Characteristics
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified current
@T
L
=110
o
C
Symbols
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JL
T
J
T
STG
0.92
5.0
350
25
25
20
-55 to +150
-55 to +150
o
ES
2AA
50
35
50
ES
2B A
100
70
100
ES
2C A
150
105
150
ES
2D A
200
140
200
ES
2FA
300
210
300
2.0
ES
2GA
400
280
400
ES
2JA
600
420
600
ES
2K A
800
560
800
ES
2MA
1000
700
1000
Units
Volts
Volts
Volts
Amps
Peak forward surge current
8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage @ 2.0A DC
Maximum DC reverse current
at rated DC blocking voltage
@ T
J
=25 C
@ T
J
=125
o
C
o
50.0
1.25
1.7
Amps
Volts
uA
uA
nS
pF
C/W
o
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Typical thermal resistance (Note 3)
Operating junction temperature range
Storage temperature range
Notes:
C
C
o
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance junction to Lead.
241

ES2BA Related Products

ES2BA ES2AA ES2CA ES2MA
Description 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC 2 A, 50 V, SILICON, RECTIFIER DIODE 2 A, 150 V, SILICON, RECTIFIER DIODE 2 A, 50 V, SILICON, RECTIFIER DIODE

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