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RT2N20M

Description
COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE
CategoryDiscrete semiconductor    The transistor   
File Size46KB,3 Pages
ManufacturerIsahaya
Websitehttp://www.idc-com.co.jp/
Download Datasheet Parametric View All

RT2N20M Overview

COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE

RT2N20M Parametric

Parameter NameAttribute value
MakerIsahaya
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
RT2N20M
COMPOSITE TRANSISTOR WITH RESISTOR
FOR SWITCHING APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
RT2N20M is a composite transistor with built-in bias resistor
OUTLINE DRAWING
2.1
1.25
Unit:mm
●Built-in bias resistor ( R1=4.7 KΩ)
●Mini package for easy mounting
2.0
0.65
0.65
APPLICATION
Inverted circuit , switching circuit , interface circuit , driver circuit
0.9
0.65
RTr1
RTr2
0∼0.1
R1
R1
TERMINAL CONNECTOR
:BASE1
:EMITTER
(COMMON
:BASE2
:COLLECTOR2
:COLLECTOR1
JEITA:−
JEDEC
:−
MAXIMUM RATINGS
Symbol
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
(Ta=25℃ (
)RTr1、RTr2
Parameter
Ratings
50
6
50
100
200
150
+150
-55∼+150
Unit
V
V
V
mA
mA
mW
MARKING
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation
(Total
Ta=25℃
Junction temperature
Storage temperature
N
H
② ③
ISAHAYA ELECTRONICS CORPORATION
0.13
0.2
FEATURE

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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