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RT3J33M

Description
Composite Transistor
File Size142KB,4 Pages
ManufacturerIsahaya
Websitehttp://www.idc-com.co.jp/
Download Datasheet View All

RT3J33M Overview

Composite Transistor

PRELIMINARY
RT3J33M
Composite Transistor
For high speed switching
Silicon
P-channel
MOSFET
DESCRIPTION
RT3J33M is a composite transistor built with two
INJ0003AX
chips in SC-88 package.
OUTLINE DRAWING
2.1
1.25
0.65
0.2
Unit:mm
FEATURE
・Input impedance is high, and not necessary to consider a drive
electric current.
・Vth is low, and drive by low voltage is possible. Vth=0.6½1.2V
・Low on Resistance. Ron=2Ω(TYP)
・High speed switching.
・Small package for easy mounting.
2.0
APPLICATION
high speed switching , Analog switching
0.65
0.13
0½0.1
Tr.1
0.9
0.65
Tr.2
TERMINAL
CONNECTOR
①:SOURCE1
②:GATE1
③:DRAIN2
④:SOURCE2
⑤:GATE2
⑥:DRAIN1
JEITA:SC-88
MAXIMUM RATING (Ta=25℃)
SYMBOL
V
DSS
V
GSS
I
D
P
D
T
ch
T
stg
PARAMETER
RATING
UNIT
V
V
mA
mW
6
5
4
MARKING
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation(Ta=25℃)
Channel temperature
Range of Storage temperature
-20
±8
-200
150
+125
-55½+125
.
.
J3 3
2
3
ISAHAYA ELECTRONICS CORPORATION
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