PRELIMINARY
RT3J33M
Composite Transistor
For high speed switching
Silicon
P-channel
MOSFET
DESCRIPTION
RT3J33M is a composite transistor built with two
INJ0003AX
chips in SC-88 package.
OUTLINE DRAWING
2.1
1.25
①
0.65
②
③
⑥
⑤
④
0.2
Unit:mm
FEATURE
・Input impedance is high, and not necessary to consider a drive
electric current.
・Vth is low, and drive by low voltage is possible. Vth=0.6½1.2V
・Low on Resistance. Ron=2Ω(TYP)
・High speed switching.
・Small package for easy mounting.
2.0
APPLICATION
high speed switching , Analog switching
0.65
0.13
0½0.1
⑤
Tr.1
0.9
0.65
⑥
④
Tr.2
TERMINAL
CONNECTOR
①:SOURCE1
②:GATE1
③:DRAIN2
④:SOURCE2
⑤:GATE2
⑥:DRAIN1
JEITA:SC-88
①
②
③
MAXIMUM RATING (Ta=25℃)
SYMBOL
V
DSS
V
GSS
I
D
P
D
T
ch
T
stg
PARAMETER
RATING
UNIT
V
V
mA
mW
℃
℃
6
5
4
MARKING
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation(Ta=25℃)
Channel temperature
Range of Storage temperature
-20
±8
-200
150
+125
-55½+125
.
.
J3 3
1
2
3
ISAHAYA ELECTRONICS CORPORATION
TYPICAL CHARACTERISTICS
Ta=25℃
-100
-1.6V
-1.5V
-80
Drain current ID (mA)
ID -VDS
-1.4V
-1.3V
Drain current ID (mA)
-5
-1.0V
-4
-0.9V
-3
-0.85V
VGS=-0.8V
-0.95V
Ta=25℃
ID -VDS(Low voltage region)
-60
-1.2V
-40
-1.1V
VGS=-1.0V
-2
-20
-1
-0
-0
-2
-4
-6
-8
-10
Drain-Source voltage VDS (V)
-0
-0
-0.1
-0.2
-0.3
-0.4
-0.5
Drain-Source voltage VDS (V)
IDR -VDS
-100
Drain reverse current IDR (mA)
Ta=25℃
VGS=0V
Drain current ID (mA)
-100
-1000
Ta=25℃
VDS=-10V
ID -VGS
-10
-10
-1
0
0.5
1
1.5
2
Drain-Source voltage VDS (V)
-1
-0
-1
-2
-3
-4
-5
Gate-Source voltage VGS (V)
|Yfs| - ID
1000
Forward transfer admittance
|Yfs| (mS)
Ta=25℃
VDS=-10V
100
-1000
Ta=25℃
VGS=-4V
Drain-Source ON voltage
VDS(ON) (mV)
VDS(ON) -ID
-100
10
-10
1
-1
-10
-100
-1000
Drain current ID (mA)
-1
-1
-10
Drain current ID (mA)
-100
t - ID
10000
Ta=25℃
toff
Switching time t (ns)
1000
tf
Capacitance C (pF)
100
C - VDS
Ciss
100
10
Coss
ton
10
tr
Ta=25℃
VGS=0V
1
-0.1
1
-0.1
-1
-10
Drain current ID (mA)
-100
-1
-10
Drain-Source voltage VDS (V)
-100
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Apr.2007