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RT3NDDM

Description
Composite Transistor With Resistor
File Size52KB,3 Pages
ManufacturerIsahaya
Websitehttp://www.idc-com.co.jp/
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RT3NDDM Overview

Composite Transistor With Resistor

PRELIMINARY
RT3NDDM
Composite Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
RT3NDDM is a composite transistor built with two
RT1N237 chips in SC-88 package.
OUTLINE DRAWING
2.1
1.25
0.65
0.2
Unit
:mm
FEATURE
Silicon NPN epitaxial type
Built in bias resistor (R1=2.2kΩ,R2=47kΩ)
Each transistor elements are independent.
Mini package for easy mounting
2.0
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
0.65
0.13
R1
RTr1
RTr2
R2
R1
0∼0.1
R2
TERMINAL
CONNECTOR
:EMITTER1
:BASE1
:COLLECTOR2
:EMITTER2
:BASE2
⑥:COLLECTOR1
JEITA:SC-88
MAXIMUM RATING (Ta=25
℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation
(Total,
Ta=25℃
Junction temperature
Storage temperature
RATING
50
10
50
100
200
150
+150
-55∼+150
UNIT
V
V
V
mA
mA
mW
0.9
0.65
MARKING
⑥ ⑤ ④
.
N DD
① ② ③
ISAHAYA ELECTRONICS CORPORATION

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