Bulletin I2107 rev. F 03/03
SAFE
IR
Series
40TPS..
PHASE CONTROL SCR
V
T
< 1.45V @ 40A
I
TSM
= 500A
V
RRM
= 800 - 1200V
Description/ Features
The 40TPS...
SAFE
IR
series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reli-
able operation up to 125°C junction temperature.
Low Igt parts available.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical
package outlines.
Major Ratings and Characteristics
Characteristics
I
T(AV)
Sinusoidal
waveform
I
RMS
V
RRM
/ V
DRM
Range
I
TSM
V
T
dv/dt
di/dt
T
J
@ 40 A, T
J
= 25°C
55
800 - 1200
500
1.45
1000
100
- 40 to 125
A
V
A
V
V/µs
A/µs
°C
Package Outline
Units
A
40TPS..
35
TO-247AC
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1
40TPS..
SAFE
IR
Series
Bulletin I2107 rev. F 03/03
Voltage Ratings
V
RRM
/ V
DRM
, max. repetitive
Part Number
40TPS08
40TPS12
V
RSM
, maximum non repetitive
peak reverse voltage
V
900
1300
I
RRM
/ I
DRM
125°C
mA
10
peak and off-state voltage
V
800
1200
Absolute Maximum Ratings
Parameters
I
T(AV)
Max. Average On-state Current
I
T(RMS)
Max. Continuous RMS
On-state Current As AC switch
I
TSM
I
2
t
Max. Peak One Cycle Non-Repetitive
Surge Current
Max. I
2
t for Fusing
500
600
1250
1760
I
2
√t
Max. I
2
√t
for Fusing
12500
1.02
A
2
√s
V
A
2
s
A
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
t = 0.1 to 10ms, no voltage reapplied
T
J
= 125°C
Initial
T
J
= T
J
max.
40TPS..
35
55
Units
A
Conditions
@ T
C
= 79° C, 180° conduction half sine wave
V
T(TO)
1
Low Level Value of Threshold
Voltage
V
T(TO)
2
High Level Value of Threshold
Voltage
r
t1
r
t2
V
TM
di/dt
I
H
I
L
I
RRM
/
I
DRM
dv/dt
Low Level Value of On-state
Slope Resistance
High Level Value of On-state
Slope Resistance
Max. Peak On-state Voltage
Max. Rate of Rise of Turned-on Current
Max. Holding Current
Max. Latching Current
Max. Reverse and Direct
Leakage Current
Max. Rate of Rise
of Off-state Voltage
40TPS08
40TPS12
1.23
9.74
mΩ
7.50
1.85
100
150
300
0.5
10
500
1000
V
A/µs
mA
@ 110A, T
J
= 25°C
T
J
= 25°C
mA
T
J
= 25°C
T
J
= 125°C
V
R
= rated V
RRM
/ V
DRM
V/µs
T
J
= T
J
max., linear to 80% V
DRM
, R
g
-k = open
2
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40TPS..
SAFE
IR
Series
Bulletin I2107 rev. F 03/03
Triggering
Parameters
P
GM
Max. peak Gate Power
P
G(AV)
Max. average Gate Power
I
GM
Max. peak Gate Current
40TPS..
10
2.5
2.5
10
4.0
2.5
1.7
Units
W
Conditions
A
V
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
mA
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C, for 40TPS08A
V
mA
T
J
= 125°C, V
DRM
= rated value
Anode supply = 6V
resistive load
- V
GM
Max. peak negative Gate Voltage
V
GT
Max. required DC Gate Voltage
to trigger
I
GT
Max. required DC Gate Current
to trigger
270
150
80
40
V
GD
I
GD
Max. DC Gate Voltage not to trigger
Max. DC Gate Current not to trigger
0.25
6
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
40TPS..
- 40 to 125
- 40 to 125
0.6
Units
°C
Conditions
R
thJC
Max. Thermal Resistance Junction
to Case
R
thJA
Max. Thermal Resistance Junction
to Ambient
R
thCS
Max. Thermal Resistance Case
to Heatsink
wt
T
Approximate Weight
Mounting Torque
Min.
Max.
Case Style
°C/W
DC operation
40
0.2
Mounting surface, smooth and greased
6 (0.21)
6 (5)
12 (10)
g (oz.)
Kg-cm
(lbf-in)
TO-247AC
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3
40TPS..
SAFE
IR
Series
Bulletin I2107 rev. F 03/03
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case T
emperature (°C)
130
120
110
40T .. S
PS eries
R
thJC
(DC) = 0.6 °C/ W
130
120
110
40T .. S
PS eries
R
thJC
(DC) = 0.6 °C/ W
Conduction Angle
Conduction Period
100
90
80
70
30°
100
90
80
70
0
10
20
30
40
50
60
Average On-state Current (A)
30°
60°
60°
90°
120°
180°
90°
120°
180°
DC
0
10
20
30
40
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Maximum Avera g e On-state Power Loss (W)
Fig. 2 - Current Rating Characteristics
Maximum Averag e On-state Power Loss (W)
80
70
60
50
DC
180°
120°
90°
60°
30°
60
50
40
30
20
10
0
0
5
10
15
20
25
30
35
40
Avera ge On-sta te Current (A)
180°
120°
90°
60°
30°
RMS Limit
40 RMSLimit
30
20
10
0
40T .. S
PS eries
T
J
= 125°C
0
10
20
30
40
50
60
Conduction Angle
Conduction Period
40T .. S
PS eries
T
J
= 125°C
Avera ge On-sta te Current (A)
Fig. 3 - On-state Power Loss Characteristics
550
500
450
400
350
300
250
Fig. 4 - On-state Power Loss Characteristics
600
550
500
450
400
350
300
40T .. S
PS eries
Peak Half S Wave On-state Current (A)
ine
40T .. S
PS eries
1
10
100
Peak Half S Wa ve On-state Current (A)
ine
At Any R ted Load Condition And With
a
Rated V
RRM
Ap plied F
ollowing Surge.
Initia l T
J
= 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Ma ximum Non Rep etitive S
urge Current
Versus Pulse T
rain Duration. Control
Of Conduction May Not Be Maintained.
Initial T
J
= 125°C
No Voltage R
eap p lied
Rated V
eap p lied
RRM
R
250
0.01
0.1
Pulse T in Duration (s)
ra
1
Number Of Equal Amplitude Half Cycle Current Puls (N)
es
Fig. 5 - Maximum Non-Repetitive Surge
Current
Fig. 6 - Maximum Non-Repetitive Surge Current
4
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40TPS..
SAFE
IR
Series
Bulletin I2107 rev. F 03/03
100
Instanta neous On-s te Current (A)
ta
10
T
J
= 25°C
T
J
= 125°C
40T .. S
PS eries
1
0.5
1
1.5
2
Instantaneous On-state Voltag e (V)
Fig. 7 - On-state Voltage Drop Characteristics
100
Instantaneous Gate Voltage (V)
10
Rec tangular gate pulse
a)Rec ommended load line for
rated di/ dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
b)R ommended load line for
ec
<= 30% rated di/ dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
(a)
(b)
T = -40 °C
J
T = 25 °C
J
T = 125 °C
J
1
VGD
IGD
0.1
0.001
0.01
(4) (3)
(2) (1)
40T ..
PS
0.1
1
Frequenc y Limited by PG(AV)
10
100
1000
Instantaneous Gate Current (A)
Fig. 8 - GateCharacteristics
T
ransient T
hermal Impeda nc e Z
thJC
(°C/W)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
S
teady S
tate Value
(DC Opera tion)
S
ingle Pulse
40T .. S
PS eries
0.01
0.0001
0.001
0.01
S
quare Wave Pulse Duration (s)
0.1
1
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
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