EEWORLDEEWORLDEEWORLD

Part Number

Search

GS881E36T-11T

Description
Cache SRAM, 256KX36, 11ns, CMOS, PQFP100, TQFP-100
Categorystorage    storage   
File Size468KB,34 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Download Datasheet Parametric View All

GS881E36T-11T Overview

Cache SRAM, 256KX36, 11ns, CMOS, PQFP100, TQFP-100

GS881E36T-11T Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeQFP
package instructionLQFP,
Contacts100
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Maximum access time11 ns
Other featuresFLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 codeR-PQFP-G100
length20 mm
memory density9437184 bit
Memory IC TypeCACHE SRAM
memory width36
Number of functions1
Number of terminals100
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX36
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
Base Number Matches1
Preliminary
GS881E18/36T-11/11.5/100/80/66
100-Pin TQFP
Commercial Temp
Industrial Temp
1.10 9/2000Features
• FT pin for user-configurable flow through or pipelined
operation
• Dual Cycle Deselect (DCD) operation
• IEEE 1149.1 JTAG-compatible Boundary Scan
• On-chip write parity checking; even or odd selectable
• 3.3 V +10%/–5% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Common data inputs and data outputs
• Clock Control, registered, address, data, and control
• Internal self-timed write cycle
• Automatic power-down for portable applications
• 100-lead TQFP package
-11
-11.5
-100
-80
-66
10 ns
10 ns 12.5 ns 15 ns
Pipeline tCycle 10 ns
4.0 ns 4.0 ns 4.0 ns 4.5 ns 5.0 ns
3-1-1-1
t
KQ
I
DD
225 mA 225 mA 225 mA 200 mA 185 mA
11 ns 11.5 ns 12 ns
14 ns
18 ns
Flow
t
KQ
Through tCycle 15 ns
15 ns
15 ns
15 ns
20 ns
2-1-1-1
I
DD
180 mA 180 mA 180 mA 175 mA 165 mA
512K x 18, 256K x 36 ByteSafe™
100 MHz–66 MHz
3.3 V V
DD
8Mb Sync Burst SRAMs
3.3 V and 2.5 V I/O
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by
the user via the FT mode pin (Pin 14). Holding the FT mode
pin low places the RAM in Flow Through mode, causing
output data to bypass the Data Output Register. Holding FT
high places the RAM in Pipeline mode, activating the rising-
edge-triggered Data Output Register.
DCD Pipelined Reads
The GS881E18//36T is a DCD (Dual Cycle Deselect)
pipelined synchronous SRAM. SCD (Single Cycle Deselect)
versions are also available. DCD SRAMs pipeline disable
commands to the same degree as read commands. DCD RAMs
hold the deselect command for one full cycle and then begin
turning off their outputs just after the second rising edge of
clock.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the byte write
control inputs.
ByteSafe™ Parity Functions
Functional Description
Applications
The GS881E18//36T is a 9,437,184-bit high performance
synchronous SRAM with a 2-bit burst address counter.
Although of a type originally developed for Level 2 Cache
applications supporting high performance CPUs, the device
now finds application in synchronous SRAM applications,
ranging from DSP main store to networking chip set support.
The GS881E18/36T features ByteSafe data security functions.
See detailed discussion following.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(high) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS881E18//36T operates on a 3.3 V power supply, and all
inputs/outputs are 3.3 V- and 2.5 V-compatible. Separate
output power (V
DDQ
) pins are used to decouple output noise
from the internal circuit.
Controls
Addresses, data I/Os, chip enables (E1, E2), address burst
control inputs (ADSP, ADSC, ADV) and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
Rev: 1.10 9/2000
1/34
© 2000, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
My emergency light is fully completed. See the picture.
All the components I used are from MAXIM. Although the workmanship is not very particular, you can take a look at them for reference. The pictures were supposed to be uploaded tomorrow, but because my...
ddllxxrr DIY/Open Source Hardware
How to debug nandflash?? (as the title says software debugging)
Anyone who has done this before, please give me some tips. Thanks....
yangjunweimail Embedded System
Pull-up and pull-down resistors
Sometimes the unused pins of a chip cannot be left floating, and a pull-up resistor or a pull-down resistor is needed to make it at a high or low level. Why not connect it directly to the power supply...
zhonghuadianzie Analog electronics
How to convert ±8V signal into 0~5V signal?
The op amp is used as a comparator, powered by a single 0~5V LM324 power supply, the negative pin is connected to a +2.5V DC potential, and the positive pin is connected to a ±8V signal. For some reas...
7mofnahq Analog electronics
micropython update: 2020.7
zephyr/make-minimal: Disable FAT and LFS2 options to make it build. zephyr: Implement machine.Pin.irq() for setting callbacks on pin change. lib/utils: Protect all of mpirq.c with MICROPY_ENABLE_SCHED...
dcexpert MicroPython Open Source section

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1409  816  2837  389  698  29  17  58  8  15 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号