EEWORLDEEWORLDEEWORLD

Part Number

Search

LS424-TO-78

Description
Small Signal Field-Effect Transistor, 40V, 2-Element, N-Channel, Silicon, Junction FET, TO-78, METAL PACKAGE-6
CategoryDiscrete semiconductor    The transistor   
File Size232KB,11 Pages
ManufacturerLinear ( ADI )
Websitehttp://www.analog.com/cn/index.html
Download Datasheet Parametric View All

LS424-TO-78 Overview

Small Signal Field-Effect Transistor, 40V, 2-Element, N-Channel, Silicon, Junction FET, TO-78, METAL PACKAGE-6

LS424-TO-78 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeTO-78
package instructionCYLINDRICAL, O-MBCY-W6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS
Minimum drain-source breakdown voltage40 V
FET technologyJUNCTION
Maximum feedback capacitance (Crss)1.5 pF
JEDEC-95 codeTO-78
JESD-30 codeO-MBCY-W6
Number of components2
Number of terminals6
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
LS421, LS422, LS423,
LS424, LS425, LS426
Linear Integrated Systems
FEATURES
HIGH INPUT IMPEDANCE
HIGH GAIN
LOW POWER OPERATION
I
G
=0.25pA MAX
gfs=120µmho MIN
V
GS(off)
=2V MAX
S1
G2
G1
3
C
4
5
6
D2
S2
LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
-65° to +150°C
Operating Junction Temperature
+150°C
Maximum Voltage and Current for Each Transistor NOTE 1
Gate Voltage to Drain or Source
40V
-V
GSS
-V
DSO
-I
G(f)
Drain to Source Voltage
Gate Forward Current
40V
10mA
400mW @ +125°C
D1
D2
D1
2
S1
1
7
G2
G1
S2
TO-78
BOTTOM VIEW
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
22 X 20 MILS
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS LS421 LS422 LS423 LS424 LS425 LS426 UNITS MAX CONDITIONS
10
25
40
10
25
40
µV/°C
V
DG
= 10V I
D
= 30µA
|∆V
GS1-2
/∆T| max. Drift vs. Temperature
T
A
=-55°C to +125°C
|V
GS1-2
| max.
V
GS(off)
V
GS
I
G
max.
-I
G
max.
-I
GSS
max.
-I
GSS
max.
SYMBOL
BV
GSS
BV
GGO
Y
fss
Y
fs
I
DSS
Offset Voltage
GATE VOLTAGE
Pinchoff Voltage
Operating Range
Operating
High Temperature
At Full Conduction
High Temperature
10
2.0
1.8
.25
250
1.0
1.0
15
2.0
1.8
.25
250
1.0
1.0
25
2.0
1.8
.25
250
1.0
1.0
10
3.0
2.9
.500
500
3.0
3.0
15
3.0
2.9
.500
500
3.0
3.0
25
3.0
2.9
.500
500
3.0
3.0
mV
V
V
pA
pA
pA
nA
V
DG
=10V
V
DS
=10V
V
DG
=10V
V
DG
=10V
T
A
= +125°C
V
DS
= 0V
T
A
= +125°C
V
GS
= 20V
I
D
= 30µA
I
D
= 1nA
I
D
= 30µA
I
D
= 30µA
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
DRAIN CURRENT
Full Conduction
MIN.
40
40
300
120
60
60
TYP.
60
--
--
200
--
--
MAX.
--
--
1500
350
1000
1800
UNITS
V
V
µmho
µmho
µA
µA
CONDITIONS
V
DS
= 0
I
G
= 1nA
I
G
= 1µA
V
DS
= 10V
V
DG
= 10V
LS421-3
LS424-6
I
D
= 0
V
GS
= 0
I
D
= 30µA
V
DS
= 10V
I
S
= 0
f= 1kHz
f= 1kHz
V
GS
= 0
Linear Integrated Systems
4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1454  247  2310  1708  1812  30  5  47  35  37 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号